RESUMEN
Antimony selenosulfide, denoted as Sb2(S,Se)3, has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb2(S,Se)3 solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage (Voc) losses and fill factor (FF) losses. This study delves into the theoretical relationship between Voc and FF, revealing that, under conditions of low Voc and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address Voc and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb2(S,Se)3 solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in Voc, pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced Voc loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb2(S,Se)3, achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting Voc and FF losses in Sb2(S,Se)3 solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.
RESUMEN
Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we used an ab initio quantum transport approach to simulate sub-5 nm gate-length double-gate monolayer (ML) selenene FETs. When considering negative-capacitance technology and underlap, we found that 3 nm gate-length p-type ML selenene FETs can meet the 2013 ITRS standards for high-performance applications along the armchair and zigzag directions in the 2028 horizon. Therefore, ML selenene has the potential to be a channel material that can scale Moore's law down to a gate length of 3 nm.
RESUMEN
Trajectory planning is one of the key technologies for autonomous driving. A* algorithm is a classical trajectory planning algorithm that has good results in the field of robot path planning. However, there are still some practical problems to be solved when the algorithm is applied to vehicles, such as the algorithm fails to consider the vehicle contours, the planned path is not smooth, and it lacks speed planning. In order to solve these problems, this paper proposes a path processing method and a path tracking method for the A* algorithm. First, the method of configuring safe redundancy space is given considering the vehicle contour, then, the path is generated based on A* algorithm and smoothed using Bessel curve, and the speed is planned based on the curvature of the path. The trajectory tracking algorithm in this paper is based on an expert system and pure tracking theory. In terms of speed tracking, an expert system for the acceleration characteristics of the vehicle is constructed and used as a priori information for speed control, and good results are obtained. In terms of path tracking, the required steering wheel angle is calculated based on pure tracking theory, and the influence factor of speed on steering is obtained from test data, based on which the steering wheel angle is corrected and the accuracy of path tracking is improved. In addition, this paper proposes a target point selection method for the pure tracking algorithm to improve the stability of vehicle directional control. Finally, a simulation analysis of the proposed method is performed. The results show that the method can improve the applicability of the A* algorithm in automated vehicle planning.
RESUMEN
WO(3) nanowires (nano-WO(3)) were synthesized using a simple hydrothermal technique, and then used to modify the carbon paste electrode (CPE). The electrochemical behavior of honokiol on the unmodified CPE and nano-WO(3) modified CPE was compared. It was found that nano-WO(3) remarkably increased the oxidation signal of honokiol. The influences of supporting electrolyte, amount of nano-WO(3), accumulation potential and time were studied on the oxidation peak current of honokiol. Based on the strong enhancement effect of nano-WO(3), a sensitive, simple and rapid electrochemical method was developed for the detection of honokiol. The linear range was from 3×10(-8) to 2.0×10(-5)M, and the detection limit was as low as 1×10(-8)M after 2-min accumulation. Finally, it was used to determine honokiol in traditional Chinese medicines, and the recovery was over the range between 96.5% and 98.8%.