RESUMEN
A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (Ga2O3) nanowires using Ag thin film as a catalyst at 800 °C and 1000 °C to understand the effect of the silver catalyst on the nanowire growth. The effect of doping and orientation of the substrates on the growth of Ga2O3 nanowires on single-crystal gallium arsenide (GaAs) wafers in atmosphere were investigated. A comprehensive study of the oxide film and nanowire growth was performed using various characterization techniques including XRD, SEM, EDS, focused ion beam (FIB), XPS and STEM. Based on the characterization results, we believe that Ag thin film produces Ag nanoparticles at high temperatures and enhances the reaction between oxygen and gallium, contributing to denser and longer Ga2O3 nanowires compared to those grown without silver catalyst. This process can be optimized for large-scale production of high-quality, dense, and long nanowires.
RESUMEN
In the last decade, interest in the use of beta gallium oxide (ß-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga2O3 nanowires. We show the results of morphological, structural, electrical and optical characterization of the ß-Ga2O3 nanowires including the optical bandgap and photoconductance. The influence of density on these Ga2O3 nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.
RESUMEN
Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters.