RESUMEN
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices' performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices' manufacturing.
RESUMEN
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.
RESUMEN
We present a non-destructive optical technique for rare-earth-doped optical fiber preform inspection, which combines luminescence spectroscopy measurements, analyzed through an optical tomography technique, and ray-deflection measurements for calculating the refractive-index profile (RIP) of the sample. We demonstrate the technique on an optical fiber preform sample with a Yb3+-doped aluminosilicate core. The spatial distribution of the photoluminescence signals originating from Yb3+-single ions and from Yb3+-Yb3+ cluster sites were obtained inside the core. By modifying the characterization system, we were able to concurrently evaluate the RIP of the core and, thus, establish with good accuracy the dopant distribution within the core region. This technique will be useful for quality evaluation and optimization of optical fiber preforms.
RESUMEN
We investigated the efficiencies of two different approaches to increase the radiation hardness of optical amplifiers through development of improved rare-earth (RE) doped optical fibers. We demonstrated the efficiency of codoping with Cerium the core of Erbium/Ytterbium doped optical fibers to improve their radiation tolerance. We compared the γ-rays induced degradation of two amplifiers with comparable pre-irradiation characteristics (~19 dB gain for an input power of ~10 dBm): first one is made with the standard core composition whereas the second one is Ce codoped. The radiation tolerance of the Ce-codoped fiber based amplifier is strongly enhanced. Its output gain decrease is limited to ~1.5 dB after a dose of ~900 Gy, independently of the pump power used, which authorizes the use of such fiber-based systems for challenging space missions associated with high total doses. We also showed that the responses of the two amplifiers with or without Ce-codoping can be further improved by another technique: the pre-loading of these fibers with hydrogen. In this case, the gain degradation is limited to 0.4 dB for the amplifier designed with the standard composition fiber whereas 0.2 dB are reported for the one made with Ce-codoped fiber after a cumulated dose of ~900 Gy. The mechanisms explaining the positive influences of these two treatments are discussed.