RESUMEN
The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging, but important to understand their structure and transport mechanism, and to improve current industrial products and production processes. We report on the 2nd generation of a measurement chip, which allows for a simplified sample preparation process, and the measurement of samples deposited from the liquid phase using techniques like spin coating and drop casting. The new design enables us to apply much higher temperature gradients for the Seebeck coefficient measurement in a shorter time, without influencing the sample holder's temperature distribution. Furthermore, a two membrane correction method for the 3ω thermal conductivity measurement will be presented, which takes the heat loss due to radiation into account and increases the accuracy of the measurement results significantly. Errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our platform, we present temperature-dependent measurements of the thermoelectric properties of an 84 nm Bi87Sb13 thin film and a 15 µm PEDOT:PSS thin film.
RESUMEN
The Seebeck coefficient and electrical resistance of Bi1-xSbx nanowire arrays electrodeposited in etched ion-track membranes have been investigated as a function of wire diameter (40-750 nm) and composition (0 ≤ x ≤ 1). The experimental data reveal a non-monotonic dependence between thermopower and wire diameter for three different compositions. Thus, the thermopower values decrease with decreasing wire diameter, exhibiting a minimum around â¼60 nm. This non-monotonic dependence of the Seebeck coefficient is attributed to the interplay of surface and bulk states. On the one hand, the metallic properties of the surface states can contribute to decreasing the thermopower of the nanostructure with increasing surface-to-volume ratio. On the other hand, for wires thinner than â¼60 nm, the relative increase of the thermopower can be tentatively attributed to the presence of quantum-size effects on both surface and bulk states. These measurements contribute to a better understanding of the interplay between bulk and surface states in nanostructures, and indicate that the decrease of Seebeck coefficient with decreasing diameter caused by the presence of surfaces states can possibly be overcome for even thinner nanowires.
RESUMEN
Temperature induced changes of the local chemical structure of bulk amorphous GexSiOy are studied by Ge K-edge x-ray absorption near-edge spectroscopy and Si L2/3-edge x-ray Raman scattering spectroscopy. Different processes are revealed which lead to formation of Ge regions embedded in a Si oxide matrix due to different initial structures of as-prepared samples, depending on their Ge/Si/O ratio and temperature treatment, eventually resulting in the occurrence of nanocrystals. Here, disproportionation of GeOx and SiOx regions and/or reduction of Ge oxides by pure Si or by a surrounding Si sub-oxide matrix can be employed to tune the size of Ge nanocrystals along with the chemical composition of the embedding matrix. This is important for the optimization of the electronic and luminescent properties of the material.
RESUMEN
A new method for the measurement of thermal conductivity of electrically conducting single nanowires is presented. First experimental investigations are focused on the thermal conductivity of metallic Pt nanowires with a diameter of (typically) 100 nm and a length of 10 microm. Thermal conductivity data are compared with measurements of electrical conductivity in order to test the Wiedemann-Franz law for metallic nanowires. Compared to the bulk values at room temperature, electrical and thermal conductivities of the nanowire are decreased by a factor of 2.5 and 3.4, respectively. Consequently, the Lorenz number L = lambda/sigmaT = 1.82 x 10(-8) V(2) K(-2) of the nanowire is smaller than the bulk Lorenz number L(bulk) = (pi(2)/3)(k/e)(2) = 2.44 x 10(-8) V(2) K(-2) of metals. Furthermore, the temperature coefficient beta of electrical resistivity is also reduced compared to the bulk value. These decreases of lambda, sigma and beta can be attributed to size effects, mainly caused by grain boundary scattering of electrons.