RESUMEN
Multimode fibers are attractive for high-power lasers if transverse modes are efficiently controlled. Here, a dielectric thin-film mirror (R~20%) is micro-fabricated on the central area of the end face of a 1 km multimode 100/140 µm graded-index fiber and tested as the output mirror of a Raman laser with highly multimode (M2~34) 940 nm diode pumping. In the cavity with highly reflective input FBG, Raman lasing of the Stokes wave at 976 nm starts at the threshold pump power of ~80 W. Mode-selective properties of mirrors with various diameters were tested experimentally and compared with calculations in COMSOL, with the optimum diameter found to be around 12 µm. The measured Raman laser output beam at 976 nm has a quality factor of M2~2 near the threshold, which confirms a rather good selection of the fundamental transverse mode. The power scaling capabilities, together with a more detailed characterization of the output beam's spatial profile, spectrum, and their stability, are performed. An approximately 35 W output power with an approximately 60% slope efficiency and a narrow spectrum has been demonstrated at the expense of a slight worsening of beam quality to M2~3 without any sign of mirror degradation at the achieved intensity of >30 MW/cm2. Further power scaling of such lasers as well as the application of the proposed technique in high-power fiber lasers are discussed.
RESUMEN
Fighting against the falsification of valuable items remains a crucial social-threatening challenge stimulating a never-ending search for novel anti-counterfeiting strategies. The demanding security labels must simultaneously address multiple requirements (high density of the recorded information, high protection degree, etc.) and be realized via scalable and inexpensive technologies. Here, the direct reproducible femtosecond-laser patterning of thin glass-supported amorphous (α-)Si films is proposed for optical information encryption and the scalable and highly reproducible fabrication of security labels composed of Raman-active hemispherical Si nanoparticles (NPs). Laser printing conditions allow the precise control of the diameter of the formed NPs ensuring translation of their dipolar Mie resonance position within the entire visible spectral range. Two-temperature molecular dynamics simulations clarify the origin of α-Si NP formation by rupture of the molten Si layer driven by a negative GPa-range pressure near the liquid-solid interface. Arrangement of the laser-printed Mie-resonant NP allows the creation of hidden security labels offering several easy-to-realize information encryption strategies (for example, local laser-induced post-crystallization or mixing Mie-resonant and non-resonant NPs), additional protection modalities, facile Raman mapping readout and dense information recording (up to 60 000 dots per inch) close to the optical diffraction limit. The developed fabrication strategy is simple, inexpensive, and scalable and can be realized based on cheap Earth-abundant materials and commercially-available equipment justifying its practical applicability and attractiveness for anti-counterfeit and security applications.
RESUMEN
Thermochemical laser-induced periodic surface structures (TLIPSS) are a relatively new type of periodic structures formed in the focal area of linear polarized laser radiation by the thermally stimulated reaction of oxidation. The high regularity of the structures and the possibility of forming high-ordered structures over a large area open up possibilities for the practical application for changing the optical and physical properties of materials surface. Since the mechanism of formation of these structures is based on a chemical oxidation reaction, an intriguing question involves the influence of air pressure on the quality of structure formation. This paper presents the results on the TLIPSS formation on a thin hafnium film with fs IR laser radiation at various ambient air pressures from 4 Torr to 760 Torr. Despite the decrease in the oxygen content in the ambient environment by two orders of magnitude, the formation of high-ordered TLIPSS (dispersion in the LIPSS orientation angle δθ < 5°) with a period of ≈700 nm occurs within a wide range of parameters variation (laser power, scanning speed). This behavior of TLIPSS formation is in agreement with experimental data obtained earlier on the study of the kinetics of high-temperature oxidation of hafnium at various oxygen pressures.