Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 8 de 8
Filtrar
Más filtros











Base de datos
Intervalo de año de publicación
1.
Phys Rev Lett ; 122(8): 080503, 2019 Mar 01.
Artículo en Inglés | MEDLINE | ID: mdl-30932559

RESUMEN

We theoretically propose and experimentally implement a method of measuring a qubit by driving it close to the frequency of a dispersively coupled bosonic mode. The separation of the bosonic states corresponding to different qubit states begins essentially immediately at maximum rate, leading to a speedup in the measurement protocol. Also the bosonic mode can be simultaneously driven to optimize measurement speed and fidelity. We experimentally test this measurement protocol using a superconducting qubit coupled to a resonator mode. For a certain measurement time, we observe that the conventional dispersive readout yields close to 100% higher average measurement error than our protocol. Finally, we use an additional resonator drive to leave the resonator state to vacuum if the qubit is in the ground state during the measurement protocol. This suggests that the proposed measurement technique may become useful in unconditionally resetting the resonator to a vacuum state after the measurement pulse.

2.
Sci Rep ; 8(1): 3966, 2018 Mar 02.
Artículo en Inglés | MEDLINE | ID: mdl-29500368

RESUMEN

We experimentally study nanoscale normal-metal-insulator-superconductor junctions coupled to a superconducting microwave resonator. We observe that bias-voltage-controllable single-electron tunneling through the junctions gives rise to a direct conversion between the electrostatic energy and that of microwave photons. The measured power spectral density of the microwave radiation emitted by the resonator exceeds at high bias voltages that of an equivalent single-mode radiation source at 2.5 K although the phonon and electron reservoirs are at subkelvin temperatures. Measurements of the generated power quantitatively agree with a theoretical model in a wide range of bias voltages. Thus, we have developed a microwave source which is compatible with low-temperature electronics and offers convenient in-situ electrical control of the incoherent photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components or suffering from unwanted losses in room temperature cables. Importantly, our observation of negative generated power at relatively low bias voltages provides a novel type of verification of the working principles of the recently discovered quantum-circuit refrigerator.

3.
Sci Rep ; 7(1): 14713, 2017 11 07.
Artículo en Inglés | MEDLINE | ID: mdl-29116119

RESUMEN

We introduce a magnetic-flux-tunable phase shifter for propagating microwave photons, based on three equidistant superconducting quantum interference devices (SQUIDs) on a transmission line. We experimentally implement the phase shifter and demonstrate that it produces a broad range of phase shifts and full transmission within the experimental uncertainty. Together with previously demonstrated beam splitters, this phase shifter can be utilized to implement arbitrary single-qubit gates for qubits based on propagating microwave photons. These results complement previous demonstrations of on-demand single-photon sources and detectors, and hence assist in the pursuit of an all-microwave quantum computer based on propagating photons.

4.
Phys Rev Lett ; 113(24): 246801, 2014 Dec 12.
Artículo en Inglés | MEDLINE | ID: mdl-25541792

RESUMEN

Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV semiconductor materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This Letter presents the first experimental detection and manipulation of a single ²9Si nuclear spin. The quantum nondemolition single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of T2=6.3(7) ms­in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the ²9Si atom under investigation. These results demonstrate that single ²9Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.

5.
Phys Rev Lett ; 112(23): 236801, 2014 Jun 13.
Artículo en Inglés | MEDLINE | ID: mdl-24972221

RESUMEN

We present the experimental observation of a large exchange coupling J ≈ 300 µeV between two (31)P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a single-electron transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time T(1) ≈ 4 ms at zero magnetic field agrees with the theoretical prediction for J-coupled 31P dimers in silicon. The time evolution of the two-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of two-qubit quantum logic gates with spins in silicon and highlight the necessity to adopt gating schemes compatible with weak J-coupling strengths.


Asunto(s)
Fósforo/química , Teoría Cuántica , Silicio/química , Microscopía Electrónica
6.
Nature ; 496(7445): 334-8, 2013 Apr 18.
Artículo en Inglés | MEDLINE | ID: mdl-23598342

RESUMEN

Detection of nuclear spin precession is critical for a wide range of scientific techniques that have applications in diverse fields including analytical chemistry, materials science, medicine and biology. Fundamentally, it is possible because of the extreme isolation of nuclear spins from their environment. This isolation also makes single nuclear spins desirable for quantum-information processing, as shown by pioneering studies on nitrogen-vacancy centres in diamond. The nuclear spin of a (31)P donor in silicon is very promising as a quantum bit: bulk measurements indicate that it has excellent coherence times and silicon is the dominant material in the microelectronics industry. Here we demonstrate electrical detection and coherent manipulation of a single (31)P nuclear spin qubit with sufficiently high fidelities for fault-tolerant quantum computing. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate quantum non-demolition and electrical single-shot readout of the nuclear spin with a readout fidelity higher than 99.8 percent-the highest so far reported for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radio-frequency pulses. For an ionized (31)P donor, we find a nuclear spin coherence time of 60 milliseconds and a one-qubit gate control fidelity exceeding 98 percent. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear-spin-based quantum-information processing.

7.
Nature ; 489(7417): 541-5, 2012 Sep 27.
Artículo en Inglés | MEDLINE | ID: mdl-22992519

RESUMEN

A single atom is the prototypical quantum system, and a natural candidate for a quantum bit, or qubit--the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the nitrogen-vacancy-centre point defect. Solid-state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger-scale quantum processors. Coherent control of spin qubits has been achieved in lithographically defined double quantum dots in both GaAs (refs 3-5) and Si (ref. 6). However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent in atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot read-out. We use electron spin resonance to drive Rabi oscillations, and a Hahn echo pulse sequence reveals a spin coherence time exceeding 200 µs. This time should be even longer in isotopically enriched (28)Si samples. Combined with a device architecture that is compatible with modern integrated circuit technology, the electron spin of a single phosphorus atom in silicon should be an excellent platform on which to build a scalable quantum computer.

8.
Nature ; 467(7316): 687-91, 2010 Oct 07.
Artículo en Inglés | MEDLINE | ID: mdl-20877281

RESUMEN

The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important. Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in silicon can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility of eliminating nuclear spins from the bulk crystal. However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor-compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA