1.
J Nanosci Nanotechnol
; 13(6): 4291-6, 2013 Jun.
Artículo
en Inglés
| MEDLINE
| ID: mdl-23862489
RESUMEN
We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memory. The dislocation decreased when n-type ions were implanted at a low energy level for source and drain. A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. These methods dramatically reduced the standby leakage current.