1.
Nanotechnology
; 29(3): 035301, 2018 Jan 19.
Artículo
en Inglés
| MEDLINE
| ID: mdl-29182523
RESUMEN
We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2-20 kJ cm-2. We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I G /I D and I G /I 2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/â¡ and â¼1 µm film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.