RESUMEN
Amorphous silicon has ideal properties for many applications in fundamental research and industry. However, the optical absorption is often unacceptably high, particularly for gravitational-wave detection. We report a novel ion-beam deposition method for fabricating amorphous silicon with unprecedentedly low unpaired electron-spin density and optical absorption, the spin limit on absorption being surpassed for the first time. At low unpaired electron density, the absorption is no longer correlated with electron spins, but with the electronic mobility gap. Compared to standard ion-beam deposition, the absorption at 1550 nm is lower by a factor of ≈100. This breakthrough shows that amorphous silicon could be exploited as an extreme performance optical coating in near-infrared applications, and it represents an important proof of concept for future gravitational-wave detectors.
RESUMEN
As the most ambitious concept of isotope separation on line (ISOL) facility, EURISOL aims at producing unprecedented intensities of post-accelerated radioactive isotopes. Charge breeding, which transforms the charge state of radioactive beams from 1+ to an n+ charge state prior to post-acceleration, is a key technology which has to overcome the following challenges: high charge states for high energies, efficiency, rapidity and purity. On the roadmap to EURISOL, a dedicated R&D is being undertaken to push forward the frontiers of the present state-of-the-art techniques which use either electron cyclotron resonance or electron beam ion sources. We describe here the guidelines of this R&D.
RESUMEN
The injection of a 1+ beam into an electron cyclotron resonance (ECR) charge breeder is classically performed through a grounded tube placed on its axis at the injection side. This tube presents various disadvantages for the operation of an ECR charge breeder. First experiments without a grounded tube show a better use of the microwave power and a better charge breeding efficiency. The optical acceptance of the charge breeder without decelerating tube allows the injection of high intensity 1+ ion beams at high energy, allowing metals sputtering inside the ion source. The use of this method for refractory metallic ion beams production is evaluated.
RESUMEN
Due to the very small size of a COMIC (Compact MIcrowave and Coaxial) device [P. Sortais, T. Lamy, J. Médard, J. Angot, L. Latrasse, and T. Thuillier, Rev. Sci. Instrum. 81, 02B31 (2010)] it is possible to install such plasma or ion source inside very different technical environments. New applications of such a device are presented, mainly for industrial applications. We have now designed ion sources for highly focused ion beam devices, ion beam machining ion guns, or thin film deposition machines. We will mainly present new capabilities opened by the use of a multi-beam system for thin film deposition based on sputtering by medium energy ion beams. With the new concept of multi-beam sputtering (MBS), it is possible to open new possibilities concerning the ion beam sputtering (IBS) technology, especially for large size deposition of high uniformity thin films. By the use of multi-spots of evaporation, each one corresponding to an independent tuning of an individual COMIC ion source, it will be very easy to co-evaporate different components.
RESUMEN
The physics background requiring a very intense multicharged heavy ion source for Spiral2 is explained. The new Spiral2 low energy beam line dedicated to the heavy ions production and equipped with PHOENIX V2 ECRIS is presented. A status of the A-PHOENIX commissioning at 18 GHz is summarized. A new hybrid ECRIS concept with a cryogenic permanent magnet hexapole is proposed as an improvement of A-PHOENIX technology.
RESUMEN
In order to drastically reduce the power consumption of a microwave ion source, we have studied some specific discharge cavity geometries in order to reduce the operating point below 1 W of microwave power (at 2.45 GHz). We show that it is possible to drive an electron cyclotron resonance ion source with a transmitter technology similar to those used for cellular phones. By the reduction in the size and of the required microwave power, we have developed a new type of ultralow cost ion sources. This microwave discharge system (called COMIC, for COmpact MIcrowave and Coaxial) can be used as a source of light, plasma or ions. We will show geometries of conductive cavities where it is possible, in a 20 mm diameter chamber, to reduce the ignition of the plasma below 100 mW and define typical operating points around 5 W. Inside a simple vacuum chamber it is easy to place the source and its extraction system anywhere and fully under vacuum. In that case, current densities from 0.1 to 10 mA/cm(2) (Ar, extraction 4 mm, 1 mAe, 20 kV) have been observed. Preliminary measurements and calculations show the possibility, with a two electrodes system, to extract beams within a low emittance. The first application for these ion sources is the ion injection for charge breeding, surface analyzing system and surface treatment. For this purpose, a very small extraction hole is used (typically 3/10 mm for a 3 microA extracted current with 2 W of HF power). Mass spectrum and emittance measurements will be presented. In these conditions, values down to 1 pi mm mrad at 15 kV (1sigma) are observed, thus very close to the ones currently observed for a surface ionization source. A major interest of this approach is the possibility to connect together several COMIC devices. We will introduce some new on-going developments such as sources for high voltage implantation platforms, fully quartz radioactive ion source at ISOLDE or large plasma generators for plasma immersion, broad or ribbon beams generation.