RESUMEN
In the present communication we have studied the effect of thermal annealing duration on morphology of methylamine lead triiodide (MAPbI3) perovskite (prepared using single step method) semiconductor that changes into lead iodide (PbI2). Furthermore, the effect of annealing duration on thin films is investigated and correlated with its potential photovoltaic application. Thin films characteristics study by X-ray diffraction and scanning electron microscopy results indicate MAPbI3 degraded strongly by annealing duration. However, thin films (about 1.25 micron-thick) annealed at 80 °C for 10 min in ambient conditions cause minimum degradation with smooth and uniform surface morphology. It also shows a higher absorption coefficient with the band gap of °1.5 eV rendering this perovskite suitable for practical applications.