RESUMEN
We realize and investigate an all-semiconductor quantized voltage source which generates quantized output voltages V(out) = f(h/e) linked only to two fundamental constants, the electron's charge e and Planck's constant h, and to an applied excitation frequency f. The device is based on an integrated quantized circuit of a single-electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. Robust output voltages up to several µV are generated, which are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrology triangle.
RESUMEN
It is demonstrated that valence-band mixing in GaAs quantum wells tremendously modifies electronic transport. A coherent control scheme in which ultrafast currents are optically injected into undoped GaAs quantum wells upon excitation with femtosecond laser pulses is employed. An oscillatory dependence of the injection current amplitude and direction on the excitation photon energy is observed. A microscopic theoretical analysis shows that this current reversal is caused by the coupling of the light- and heavy-hole bands and that the hole currents dominate the overall current response. These surprising consequences of band mixing illuminate fundamental physics as they are unique for experiments which are able to monitor electronic transport resulting from carriers with relatively large momenta.
RESUMEN
We investigate the adaptive optimization of broadband laser pulses, using a closed-loop learning algorithm in which the merit function is derived from two-photon absorption in semiconductors. Photoluminescence experiments with CdS thin films and photocurrent measurements of a GaAsP photodiode have been performed. The experimental data demonstrate that reliable and accurate pulse compression to the bandwidth limit can be achieved, unperturbed by nontrivial phase effects. Therefore two-photon absorption proves to be an easy-to-implement alternative to second-harmonic generation for the compression of broadband laser pulses.
RESUMEN
We have developed an instrument for optically measuring carrier dynamics in thin-film materials with approximately 150 nm lateral resolution, approximately 250 fs temporal resolution and high sensitivity. This is accomplished by combining an ultrafast pump-probe laser spectroscopic technique with a near-field scanning optical microscope. A diffraction-limited pump and near-field probe configuration is used, with a novel detection system that allows for either two-colour or degenerate pump and probe photon energies, permitting greater measurement flexibility than that reported in earlier published work. The capabilities of this instrument are proven through near-field degenerate pump-probe studies of carrier dynamics in GaAs/AIGaAs single quantum well samples locally patterned by focused ion beam (FIB) implantation. We find that lateral carrier diffusion across the nanometre-scale FIB pattern plays a significant role in the decay of the excited carriers within approximately 1 microm of the implanted stripes, an effect which could not have been resolved with a far-field system.