RESUMEN
The radiation effects and relaxation processes in solid N2 and N2-doped Ne matrices, preirradiated by an electron beam, have been studied in the temperature range of 5-40 and 5-15 K, respectively. The study was performed using luminescence methods: cathodoluminescence CL and developed by our group nonstationary luminescence NsL, as well as optical and current activation spectroscopy methods: spectrally resolved thermally stimulated luminescence TSL and exoelectron emission TSEE. An appreciable accumulation of N radicals, N(+), N2(+) ions, and trapped electrons is found in nitrogen-containing Ne matrices. Neutralization reactions were shown to dominate relaxation scenario in the low-temperature range, while at higher temperatures diffusion-controlled reactions of neutral species contribute. It was conceived that in α-phase of solid N2, the dimerization reaction (N2(+) + N2 â N4(+)) proceeds: "hole self-trapping". Tetranitrogen cation N4(+) manifests itself by the dissociative recombination reaction with electron: N4(+) + e(-) â N2*(a'(1)Σ(u)(-)) + N2 â N2 + N2 + hν. In line with this assumption, we observed a growth of the a'(1)Σ(u)(-) â X(1)Σ(g)(+) transition intensity with an exposure time in CL spectra and the emergence of this emission in the course of electron detrapping on sample heating in the TSL and NsL experiments.
RESUMEN
The relaxation processes in pure and doped Ar films preirradiated by an electron beam are studied with the focus on charging effects. Correlated real time measurements have been performed applying current and optical activation spectroscopy methods. Thermally stimulated exoelectron emission and thermally stimulated luminescence are detected in the vacuum ultraviolet and visible range. An appreciable accumulation of electrons in the matrix is found, and prerequisites for negative space charge formation are ascertained. The part played by pre-existing and radiation-induced defects as well as dopants is considered and the temperature range of the electron trap stability is elucidated. It is shown that laser-induced electron detachment from O(-) centers results in an enhancement of electron detrapping via the chemiluminescence mechanism, viz. neutralized and thermally mobilized O atoms recombine. Formation of O(2)* results in the emission of visible photons. These photons act as a stimulating factor for electron release and transport, terminating in exoelectron emission and charge recombination. Chemiluminescence therefore plays an important role in the decay of charged centers.
RESUMEN
The effect of a "guest-host" interaction on the phase composition and sorption properties of the composite sorbents "salt in a porous host matrix" has been studied. The matrix was a mesoporous silica of KSK type, while the confined salts were CaCl(2), CuSO(4), MgSO(4), and Na(2)SO(4). Both structure and properties of the composites were studied by X-ray diffraction, titration in the pH range of 2-9, differential dissolution, and TG techniques. Chemical interaction between the silica surface and the salt during preparation results in the formation of the salt surface complexes and stabilization of the dispersed salt in two phases, namely, a crystalline phase and an X-ray amorphous phase. The water sorption properties of the composites depend on the phase composition and can be intently modified by using variation of the preparation conditions.
RESUMEN
In spite of the negative electron affinity of Ne atoms, appreciable concentrations of electrons can be trapped in solid neon layers formed by depositing the gas on a cold substrate with concurrent electron irradiation. These are trapped at defect sites, and can be promoted into the conduction band in an annealing experiment. They can then recombine with positive charges producing vacuum ultraviolet "thermoluminescence," but can also be extracted from the solid, and detected as an "exoelectron" current. The thermally stimulated exoelectron emission profiles of the electron current versus temperature reveal two broad features near 7.5 and 10 K. These are shown to correspond to two distributions of electron trapping sites with slightly differing activation energies. For the narrower, higher temperature maximum, an average activation energy of about 23 meV is deduced, in good agreement with predictions based on the theory of electronic defect formation.