RESUMEN
Two-terminal monolithic perovskite-silicon tandem solar cells demonstrate huge advantages in power conversion efficiency (PCE) compared to their respective single-junction counterparts1,2. However, suppressing interfacial recombination at the wide-bandgap perovskite/electron transport layer interface, without compromising its superior charge transport performance, remains a significant challenge for perovskite-silicon tandem cells3,4. By exploiting the nanoscale discretely distributed LiF ultrathin layer followed by an additional deposition of diammonium diiodide molecule, we have devised a bilayer intertwined passivation strategy that combines efficient electron extraction with further suppression of nonradiative recombination. We constructed perovskite-silicon tandem devices on double-side textured Czochralski (CZ)-based silicon heterojunction cell, which featured a mildly-textured front surface and a heavily-textured rear surface, leading to simultaneously enhanced photocurrent and uncompromised rear passivation. The resulting perovskite-silicon tandem achieved an independently certified stabilized PCE of 33.89%, accompanied by an impressive fill factor (FF) of 83.0% and an open-circuit voltage (Voc) of nearly 1.97 volts. To our knowledge, this represents the first reported certified efficiency of a two-junction tandem solar cell exceeding the single-junction Shockley-Queisser limit of 33.7%.
RESUMEN
Inverted inorganic perovskite solar cells (PSCs) is potential as the top cells in tandem configurations, owing to the ideal bandgap, good thermal and light stability of inorganic perovskites. However, challenges such as mismatch of energy levels between charge transport layer and perovskite, significant non-radiative recombination caused by surface defects, and poor water stability have led to the urgent need for further improvement in the performance of inverted inorganic PSCs. Herein, the fabrication of efficient and stable CsPbI3-xBrx PSCs through surface treatment of (3-mercaptopropyl) trimethoxysilane (MPTS), is reported. The silane groups in MPTS can in situ crosslink in the presence of moisture to build a 3-dimensional (3D) network by Si-O-Si bonds, which forms a hydrophobic layer on perovskite surface to inhibit water invasion. Additionally, -SH can strongly interact with the undercoordinated Pb2+ at the perovskite surface, effectively minimizing interfacial charge recombination. Consequently, the efficiency of the inverted inorganic PSCs improves dramatically from 19.0% to 21.0% under 100 mW cm-2 illumination with MPTS treatment. Remarkably, perovskite films with crosslinked MPTS exhibit superior stability when soaking in water. The optimized PSC maintains 91% of its initial efficiency after aging 1000 h in ambient atmosphere, and 86% in 800 h of operational stability testing.
RESUMEN
Silicon solar cells are a mainstay of commercialized photovoltaics, and further improving the power conversion efficiency of large-area and flexible cells remains an important research objective1,2. Here we report a combined approach to improving the power conversion efficiency of silicon heterojunction solar cells, while at the same time rendering them flexible. We use low-damage continuous-plasma chemical vapour deposition to prevent epitaxy, self-restoring nanocrystalline sowing and vertical growth to develop doped contacts, and contact-free laser transfer printing to deposit low-shading grid lines. High-performance cells of various thicknesses (55-130 µm) are fabricated, with certified efficiencies of 26.06% (57 µm), 26.19% (74 µm), 26.50% (84 µm), 26.56% (106 µm) and 26.81% (125 µm). The wafer thinning not only lowers the weight and cost, but also facilitates the charge migration and separation. It is found that the 57-µm flexible and thin solar cell shows the highest power-to-weight ratio (1.9 W g-1) and open-circuit voltage (761 mV) compared to the thick ones. All of the solar cells characterized have an area of 274.4 cm2, and the cell components ensure reliability in potential-induced degradation and light-induced degradation ageing tests. This technological progress provides a practical basis for the commercialization of flexible, lightweight, low-cost and highly efficient solar cells, and the ability to bend or roll up crystalline silicon solar cells for travel is anticipated.
RESUMEN
The interfacial morphology of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) is a key success factor to approach the theoretical efficiency of Si-based solar cells, especially Si heterojunction technology. The unexpected crystalline silicon epitaxial growth and interfacial nanotwins formation remain a challenging issue for silicon heterojunction technology. Here, we design a hybrid interface by tuning pyramid apex-angle to improve c-Si/a-Si:H interfacial morphology in silicon solar cells. The pyramid apex-angle (slightly smaller than 70.53°) consists of hybrid (111)0.9/(011)0.1 c-Si planes, rather than pure (111) planes in conventional texture pyramid. Employing microsecond-long low-temperature (500 K) molecular dynamic simulations, the hybrid (111)/(011) plane prevents from both c-Si epitaxial growth and nanotwin formation. More importantly, given there is not any additional industrial preparation process, the hybrid c-Si plane could improve c-Si/a-Si:H interfacial morphology for a-Si passivated contacts technique, and wide-applied for all silicon-based solar cells as well.