RESUMEN

We have studied the intrinsic doping level and gate hysteresis of graphene-based field effect transistors (FETs) fabricated over Si/SiO(2) substrates. It was found that the high p-doping level of graphene in some as-prepared devices can be reversed by vacuum degassing at room temperature or above depending on the degree of hydrophobicity and/or hydration of the underlying SiO(2) substrate. Charge neutrality point (CNP) hysteresis, consisting of the shift of the charge neutrality point (or Dirac peak) upon reversal of the gate voltage sweep direction, was also greatly reduced upon vacuum degassing. However, another type of hysteresis, consisting of the change in the transconductance upon reversal of the gate voltage sweep direction, persists even after long-term vacuum annealing at 200 °C, when SiO(2) surface-bound water is expected to be desorbed. We propose a mechanism for this transconductance hysteresis that involves water-related defects, formed during the hydration of the near-surface silanol groups in the bulk SiO(2), that can act as electron traps.

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RESUMEN

We report results of studies on the sheet resistance and optical transmission of thin films of boron-doped single-walled carbon nanotubes (SWNTs). Boron doping was carried out by exposure of SWNTs to B 2O 3 and NH 3 at 900 degrees C and 1-3 atom % boron was found in the SWNT bundles via electron energy loss spectroscopy (EELS). Boron doping was found to downshift the positions of the optical absorption bands associated with the van Hove singularities (E 11 (s) E 22 (s) and E 11 (m)) by approximately 30 meV relative to their positions in acid-treated and annealed SWNTs. Raman spectroscopy, EELS, and optical data are consistent with the picture that a few atom % boron has been substituted for carbon in the sp (2) framework of SWNTs. Finally, our results show that boron doping does not significantly affect the optical transmittance in the visible region. However, boron doping lowers the sheet resistance by approximately 30% relative to pristine SWNT films from the same batch. Boron-doped SWNT may provide a better approach to touch-screen technology.

RESUMEN

Results are presented of in situ studies of the thermoelectric power and four-probe resistance of single-walled carbon nanotube films during the adsorption of cyclic hydrocarbons C(6)H(2n) (n=3-6). The size of the change in these transport parameters is found to be related to the pi electron population of the molecule, suggesting the coupling between these pi electrons and those in the nanotube wall may be responsible for the observed effects. A transport model for the SWNT film behavior is presented, incorporating the effects of a new scattering channel associated with the adsorbed molecules.

RESUMEN

A combination of 4,4-diphenyl-N-isopropyl-cyclohexylamine-hydrochloride (pramiverine, Sistalgin) and N-methyl-N-(2,3-dimethyl-5-oxo-1-phenyl-3-pyrazolin-4-yl)-aminomethanesulfonate (metamizole) (Sistalgin comp.) was injected in 250 patients with severe colic pain. In 94% of the cases prompt relief from pain was observed. In addition to the reliable effect in colics of the gastrointestinal tract and the biliary duct, the high rate of success in colics of the urinary tracts should be mentioned. Good therapeutic results were also observed in pancreatitis. Only isolated cases of slight undesirable anticholinergic concomitant effects were noted. There was no effect on blood pressure and pulse rate.

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