RESUMEN
In the past decade, a new family of ternary chalcogenide absorber (TCA) materials MIMIIX2 (where MI = Cu, Ag, Pb; MII = Sb, Bi, In; and X = S, Se, Te) have been studied. The copper family of ternary chalcogenide CuSbS2 CuSbSe2 CuBiS2, and CuBiSe2 is an amazing absorber material for thin-film solar cells because of their suitable band gap, high absorption coefficient and inexpensive, nontoxic, environment friendly and sustainable nature. In the presented work, first time simulated defect density of copper vacancies in CuSbS2 (CAS), CuSbSe2 (CASe), CuBiS2 (CBS) and CuBiSe2 (CBSe) has based heterojunction thin-film solar cells (HJTFSCs) with buffer CdS, intrinsic i-ZnO, window ZnO: Al and back contact Mo and set the cell scheming ZnO: Al/i-ZnO/n-CdS/p-TCA/Mo using SCAPS 1D. Major focus of this paper is on the influence of copper vacancies defect density that impact on the performance of ternary chalcogenide with various parameters of solar cells, i.e. short-circuit current density (Jsc), open-circuit voltage (Voc), form factor (FF) and efficiency (η). The cell parameter set at constant temperature 300 K, thickness 2.5 µm, carrier density 5 × 1016 cm-3, front internal transmission coefficient 1 and illumination intensity 100 mW/cm2 with AM1.5 sun light. This study clarifies the potential benefits to utilizing of ternary chalcogenide compounds as absorber material for solar cell fabrication.
RESUMEN
Different rare-earth (RE) metal-oxides nano-particles (NPs) viz. Samarium (III) oxide (Sm2O3), Neodymium (III) oxide (Nd2O3), and Gadolinium (III) oxide (Gd2O3) were synthesized using co-precipitation route, and investigated by structural, optical, and morphological studies. Findings and supporting studies were presented to understand the role of RE-metal-oxides NPs as photo-anode material for dye sensitized solar cells (DSSCs) applications. Structural analysis of prepared RE-metaloxides, by X-ray diffraction (XRD), reveals the crystalline nature of the particles ranging from 24 to 37 nm. Morphological study by field emission scanning electron microscopy (FESEM) supports the crystalline nature in the nano range of the prepared RE-metal oxides particles. The observed d values of each sample support the growth of Gd2O3, Nd2O3, and Sm2O3 material. The band-gap of prepared material was estimated from the UV-VIS absorption data and Tauc relation. The observed band gap values are 3.55 eV, 3.31 eV, and 3.52 eV for Gd2O3, Nd2O3, and Sm2O3 respectively. These values are reasonably high compare to the bulk values, indicates the nanostructure formation. Optimized RE-metal oxides NPs employed in the form of TiO2 photo anode for the fabrication of DSSCs. FESEM confirms that the Gd2O3-based photo-anode shows more uniform and decent coverage with more porosity on the TiO2. The EIS measurements of prepared DSSCs also supported the improvement in the photovoltaic output for the modified photo-anode devices as cells with modified photo-anode exhibited less charge recombination at the photo-anode/dye/electrolyte interface with increased electron lifetime leading to improved device performance as compared to the unmodified-based DSSCs. The highest efficiency 5.51% was demonstrated by [Formula: see text]/[Formula: see text] photo-anode-based DSSCs compare to Sm2O3, and Nd2O3 activated photo-anode.