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This work evaluates the electrical, optical and thermal properties of Sn-doped GexSi1-xOy thin films for use as microbolometer sensing materials. The films were prepared using a combination of a radio frequency (RF) magnetron and direct current (DC) sputtering using a Kurt J Leskar Proline PVD-75 series sputtering machine. Thin films were deposited in an O2+Ar environment at a chamber pressure of 4 mTorr. The thicknesses of the thin films were varied between 300 nm-1.2 µm by varying the deposition time. The morphology and microstructure of thin films were investigated by atomic force microscope (AFM) imaging and X-ray diffraction (XRD), while the atomic composition was determined using the energy dispersive spectroscopy (EDS) function of a scanning electron microscope. The thin film with an atomic composition of Ge0.45Si0.05Sn0.15O0.35 was found to be amorphous. We used the Arrhenius relationship to determine the activation energy as well as temperature coefficient of resistance of the thin films, which were found to be 0.2529 eV and -3.26%/K, respectively. The noise voltage power spectral density (PSD) of the film was analyzed using a Primarius-9812DX noise analyzer using frequencies ranging from 2 Hz to 10 kHz. The noise voltage PSD of the film was found to be 1.76 × 10-11 V2/Hz and 2.78 × 10-14 V2/Hz at 2 Hz and 1KHz frequencies, respectively. The optical constants were determined using the ellipsometry reflection data of samples using an RC2 and infrared (IR) VASE Mark-II ellipsometer from J A Woollam. Absorption, transmission and reflection data for a wavelength range of 900 nm-5000 nm were also determined. We also determined the optical constant values such as the real and imaginary parts of refractive index (n and k, respectively) and real and imaginary part of permittivity (ε1 and ε2, respectively) for wavelength ranges between 193 nm to 35 µm. An optical band gap of 1.03 eV was determined from absorption data and using Tauc's equation. In addition, the thermal conductivity of the film was analyzed using a Linseis thin film analyzer employing the 3ω method. The thermal conductivity of a 780 nm thick film was found to be 0.38 Wm-1K-1 at 300 K. From the data, the Ge-Si-Sn-O alloy was found to be a promising material for use as a sensing material for microbolometers.
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Pyroelectric materials are naturally electrically polarized and exhibits a built-in spontaneous polarization in their unit cell structure even in the absence of any externally applied electric field. These materials are regarded as one of the ideal detector elements for infrared applications because they have a fast response time and uniform sensitivity at room temperature across all wavelengths. Crystals of the perovskite lead titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and MEMS devices. However, the preparation of large perfect and pure single crystals PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. In this part of the review paper, we explain the electrical behavior and characterization techniques commonly utilized to unravel the pyroelectric properties of lead titanate and its derivatives. Further, it explains how the material preparation techniques affect the electrical characteristics of resulting thin films. It also provides an in-depth discussion of the measurement of pyroelectric coefficients using different techniques.
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The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures. As examples, 2D/3D heterostructures based on monolayer TMDs (e.g., WS2) and bulk germanium (Ge) have become emerging candidates for optoelectronic applications, such as ultrasensitive photodetectors that are capable of detecting broadband light from the mid-infrared (IR) to visible range. Currently, the study of WS2/Ge(100) heterostructures is in its infancy and it remains largely unexplored how sample preparation conditions and different substrates affect their photoluminescence (PL) and other optoelectronic properties. In this report, we investigated the PL quenching effect in monolayer WS2/Ge heterostructures prepared via a wet transfer process, and employed PL spectroscopy and atomic force microscopy (AFM) to demonstrate that post-transfer low-pressure annealing improves the interface quality and homogenizes the PL signal. We further studied and compared the temperature-dependent PL emissions of WS2/Ge with those of as-grown WS2 and WS2/graphene/Ge heterostructures. The results demonstrate that the integration of WS2 on Ge significantly quenches the PL intensity (from room temperature down to 80 K), and the PL quenching effect becomes even more prominent in WS2/graphene/Ge heterostructures, which is likely due to synergistic PL quenching effects induced by graphene and Ge. Density functional theory (DFT) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional calculations show that the interaction of WS2 and Ge is stronger than in adjacent layers of bulk WS2, thus changing the electronic band structure and making the direct band gap of monolayer WS2 less accessible. By understanding the impact of post-transfer annealing and substrate interactions on the optical properties of monolayer TMD/Ge heterostructures, this study contributes to the exploration of the processing-properties relationship and may guide the future design and fabrication of optoelectronic devices based on 2D/3D heterostructures of TMDs/Ge.
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The rapid expansion of the applications of infrared (IR) sensing in the commercial market has driven the need to develop new materials and detector designs for enhanced performance. In this work, we describe the design of a microbolometer that uses two cavities to suspend two layers (sensing and absorber). Here, we implemented the finite element method (FEM) from COMSOL Multiphysics to design the microbolometer. We varied the layout, thickness, and dimensions (width and length) of different layers one at a time to study the heat transfer effect for obtaining the maximum figure of merit. This work reports the design, simulation, and performance analysis of the figure of merit of a microbolometer that uses GexSiySnzOr thin films as the sensing layer. From our design, we obtained an effective thermal conductance of 1.0135×10-7 W/K, a time constant of 11 ms, responsivity of 5.040×105 V/W, and detectivity of 9.357×107 cm-Hz1/2/W considering a 2 µA bias current.
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The microbolometer is an important device that has a variety of civilian, industrial, and military applications, especially in remote sensing and night vision. Microbolometers are sensor elements in uncooled infrared sensors, which makes the uncooled infrared sensors have the advantage of being smaller in size, light in weight and less expensive compared with cooled infrared sensors. If the microbolometers are arranged in a two-dimensional array, a thermo-graph of the object can be determined using a microbolometer based uncooled infrared sensor. Building the electro-thermal modeling over the microbolometer pixel is essential to determine the uncooled infrared sensor's performance, optimize the sensor's design structure and monitor its condition. Due to the fact that the knowledge for the complex semiconductor-material-based microbolometers over various kinds of design structures with the adjustable thermal conductance is limited so far, this work focuses on the thermal distribution first by considering factors of the radiation absorption, thermal conductance, convection feature and joule heating on varied geometry design structures using Finite Element Analysis (FEA) methods. Then the change of thermal conductance is depicted when the simulated voltage is applied quantitatively between the microplate and electrode through the dynamic interaction of the electro force and the structure deformation via the electro particles redistribution balance by utilizing the Microeletromechanical system (MEMS). In addition, a more accurate contact voltage is derived through the numerical simulation compared with the previous theoretical value and is also verified by the experiment.
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Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast response time and uniform sensitivity at room temperature over all wavelengths. Crystals of the perovskite Lead Titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and Micro-electromechanical systems (MEMS) devices. However, the preparation of large perfect, and pure single crystals of PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. A number of thin film fabrication techniques have been proposed to overcome these inadequacies, among which, magnetron sputtering has demonstrated many potentials. By addressing these aspects, the review article aims to contribute to the understanding of the challenges in the field of pyroelectric materials, highlight potential solutions, and showcase the advancements and potentials of pyroelectric perovskite series including PbZrTiO3 (PZT), PbxCa1-x (PZN-PT), etc. for which PbTiO3 is the end member. The review is presented in two parts. Part 1 focuses on material aspects, including preparation methods using magnetron sputtering and material characterization. We take a tutorial approach to discuss the progress made in epitaxial growth of lead titanate-based ceramics prepared by magnetron sputtering and examine how processing conditions may affect the crystalline quality of the growing film by linking to the properties of the substrate/buffer layer, growth substrate temperature, and the oxygen partial pressure in the gas mixture. Careful control and optimization of these parameters are crucial for achieving high-quality thin films with desired structural and morphological characteristics.
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We report the deposition and characterization of calcium lead titanate (PCT) thin films for pyroelectric detectors. PCT films of thicknesses ranging from ~250 to 400 nm were deposited on both silicon and Si/SiN/Ti/Au substrates at 13 mTorr pressure by 200W radio frequency sputtering in an Ar + O2 environment. Substrates were kept at variable temperatures during the deposition. The PCT films were annealed at various temperatures in an O2 environment for 15 min. X-ray diffraction results confirm the polycrystalline nature of these films. Energy dispersive spectroscopy function of scanning electron microscope showed that the films are stoichiometric (Ca0.43Pb0.57) TiO3 (Ca/Ti = 0.5, Pb/Ti = 0.66). Temperature dependence of capacitance, pyroelectric current, and pyroelectric coefficient was investigated for different PCT films. Our results show that films deposited at 550 °C and 600 °C demonstrate better quality and larger values of the pyroelectric coefficient. On the other hand, the capacitance fabricated on the PCT films at 550 °C showed the highest value of pyroelectric current and pyroelectric coefficient which were 14 pA and at 30 °C was ~2 µC/m2K respectively at a higher temperature. In addition, we used density functional theory to determine the atomic and band structure, real and imaginary parts of dielectric constant and refractive index, and absorption and reflection constants with energy.
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Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.
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Laser-induced breakdown spectroscopy (LIBS) is a multi-elemental and real-time analytical technique with simultaneous detection of all the elements in any type of sample matrix including solid, liquid, gas, and aerosol. LIBS produces vast amount of data which contains information on elemental composition of the material among others. Classification and discrimination of spectra produced during the LIBS process are crucial to analyze the elements for both qualitative and quantitative analysis. This work reports the design and modeling of optimal classifier for LIBS data classification and discrimination using the apparatus of statistical theory of detection. We analyzed the noise sources associated during the LIBS process and created a linear model of an echelle spectrograph system. We validated our model based on assumptions through statistical analysis of "dark signal" and laser-induced breakdown spectra from the database of National Institute of Science and Technology. The results obtained from our model suggested that the quadratic classifier provides optimal performance if the spectroscopy signal and noise can be considered Gaussian.