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The chemical originals of natural superhydrophobic surfaces are based on botanic or animal wax or fat, which have poor chemical and thermal resistance. Herein, we report a simple chemical modification of stearic acid (STA) with γ-aminopropyl triethoxysilane (APTES), to obtain an organic-inorganic molecular hybrid STA-APTES compound. A flower-like hierarchically structured surface with superhydrophobicity can be obtained simply by casting the STA-APTES solution under ambient circumstance. The crystallization of the hydrocarbon chain from STA leads to the formation of the binary microstructure and reduces the surface tension, contributing to the superhydrophobicity of the as-formed surface. In addition, the condensation of Si(OCH2CH3)3 from APTES can lead to the cross-linking of the resultant surface, which endows the as-formed superhydrophobic surface with high performances, such as excellent thermal and solvent resistance, etc. This superhydrophobic surface prepared is superior to its many analogs in nature, promising a wide application especially in harsh circumstance.

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This paper reports a systematic study on the relationship between surface structure and wetting state of ordered nanoporous alumina surface. The wettability of the porous alumina is dramatically changed from hydrophilicity to hydrophobicity by increasing the hole diameter, while maintaining the hole interval and depth. This phenomenon is attributed to the gradual transition between Wenzel and Cassie states which was proved experimentally by comparing the wetting behavior on these porous alumina surfaces. Furthermore, the relationship between surface wettability and hole depth at a fixed hole interval and diameter was investigated. For those porous alumina with relatively larger holes in diameter, transition between Wenzel and Cassie states was also achieved with increasing hole depth. A capillary-pressure balance model was proposed to elucidate the unique structure-induced transition, and the criteria for the design and construction of a Cassie wetting surface was discussed. These structure-induced transitions between Wenzel and Cassie states could provide further insight into the wetting mechanism of roughness-induced wettability and practical guides for the design of variable surfaces with controllable wettability.

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Thermochemical hole burning (THB) memory is an ultrahigh density data storage technique based on the scanning tunneling microscope (STM). It utilizes the STM current to induce localized thermochemical decomposition of TCNQ-based charge transfer (CT) complexes and sequentially create nanometer-sized holes as information bits. The writing reliability and hole size depend on many factors, including the properties of the storage materials and the STM tip, and the tip-sample distance and interaction. We have found here that for the high electrical conductivity CT complexes, the hole size (represented by volume) monotonically decreases with the tip displacement increasing in the direction of leaving the sample; but for low electrical conductivity samples, the hole size first increases and then decreases with the tip displacement increasing in the same direction. Subsequent experiments and analyses indicate that the surface deformation induced by the tip-sample interaction and the heat conduction of the metal tip account for such a unique phenomenon.

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We demonstrate here the thermochemical hole burning (THB) effect on a series of N-substituted morpholinium 7,7,8,8-tetracyanoquinodimethane charge-transfer (C-T) complexes for ultra-high-density data storage. A correlation between the decomposition temperature of the charge-transfer complex and the threshold voltage of hole burning was observed: the higher the decomposition temperature, the larger the writing threshold value, suggesting the possibility of molecular design for optimizing the hole burning performance. The macroscopic decomposition properties of these charge-transfer complexes were studied by thermal gravimetry combined with mass spectrometry. Theoretical estimation of the temperature rise induced by scanning tunneling microscopy current heating was also conducted, which indicated that the maximum temperature certainly exceeds the decomposition temperatures of these C-T complexes. These observations are consistent with the thermochemical hole burning mechanism.

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The present article describes a thermochemical hole burning (THB) effect on a charge-transfer complex triethylammonium bis-7,7,8,8-tetracyanoquinodimethane (TEA(TCNQ)(2)) using single-walled carbon nanotube (SWNT) scanning tunneling microscopy (STM) tips, which demonstrates the possibility of optimizing the THB storage materials and the writing tips for ultrahigh-density data storage. TEA(TCNQ)(2) is proven to be a high-performance THB storage material, which gives deeper holes and larger hole depth-to-diameter ratio as compared to the previous materials dipropylammonium bis-7,7,8,8-tetracyanoquinodimethane and N-methyl-N-ethylmorpholinium bis-7,7,8,8-tetracyanoquinodimethane. Instead of conventional Pt/Ir STM tips, SWNT tips made by a unique chemical assembly technique we developed have been shown to be excellent writing tips for greatly decreasing the hole sizes and increasing the storage density. Possible reasons for the improvements on the storage performance were discussed.