RESUMEN

BACKGROUND: We identified seizure characteristics, long-term outcome, and predictors of persistent seizures in children with anti-N-methyl-d-aspartate receptor (anti-NMDAR) encephalitis. METHOD: Data were analyzed from patients with anti-NMDAR encephalitis who presented with seizures at our center between August 2012 and June 2018. RESULTS: Sixty-two of 86 patients with anti-NMDAR encephalitis experienced seizures. Seizures occurred within two weeks of disease onset in 58 of 62 (93.6%) patients; 36 of 62 (58.1%) had seizures as the initial symptom. Males were more likely to exhibit seizures as the initial symptom (P = 0.039). More than a quarter of patients (17 of 62, 27.4%) manifested two or more seizure types. Focal seizures were the most common (46 of 62, 74.2%). Status epilepticus occurred in 27 of 62 (43.5%) patients, and nonconvulsive status epilepticus, in two of 62 (3.2%) patients. No patient developed refractory status epilepticus. No systemic tumors were found. Electroencephalographic abnormalities included background slowing (77.4%), absence of a posterior dominant rhythm (62.9%), interictal epileptic discharges (50.0%), and extreme delta brush (6.5%). In the acute phase, 45 patients (45 of 62, 72.6%) received antiepileptic drugs. Persistent seizures occurred in only five of 62 (8%) patients. On univariate analysis, status epilepticus and combination antiepileptic drug treatment were associated with persistent seizures, but neither independently predicted persistent seizures. CONCLUSIONS: Multiple seizure types may develop at any stage of anti-N-methyl-d-aspartate receptor encephalitis. Refractory status epilepticus, systemic tumors, and extreme delta brush in electroencephalography are rare in pediatric patients. Anti-NMDAR encephalitis-associated seizures appear to have good prognosis, without the need for long-term antiepileptic drug treatment.

Asunto(s)

Encefalitis Antirreceptor N-Metil-D-Aspartato/complicaciones , Epilepsia/etiología , Epilepsia/fisiopatología , Convulsiones/etiología , Convulsiones/fisiopatología , Adolescente , Encefalitis Antirreceptor N-Metil-D-Aspartato/epidemiología , Niño , Preescolar , Electroencefalografía , Epilepsia/epidemiología , Femenino , Humanos , Lactante , Masculino , Estudios Retrospectivos , Riesgo , Convulsiones/epidemiología , Factores Sexuales , Estado Epiléptico/etiología , Estado Epiléptico/fisiopatología

RESUMEN

We report on the use of a selective, non-volatile ionic liquid (IL) to enhance the self-assembly via solvent annealing of a low molecular weight block copolymer (BCP) of styrene and 2-vinylpyridine (2VP) suitable for generating sub-10 nm features. Diblock and triblock copolymers of different molecular weights of styrene and 2VP are individually blended with the IL and then solvent annealed in acetone, a non-preferential solvent for the BCPs. Differential scanning calorimetry indicates that the IL selectively resides in the 2VP block of the BCP, resulting in a decrease of the block's Tg and an increase of the effective Flory-Huggins parameter (χeff) of the BCP. The influence of the IL on the non-preferential window of a random copolymer brush used to treat the substrate for self-assembly of the BCPs is also analyzed. Well-defined lamellar patterns form when the optimal weight ratio of IL (∼1%) is added to the BCPs. A detailed analysis of the orientational correlation length and pitch size of the BCPs quantitatively shows that the addition of the IL enhanced the microphase separation of the low molecular weight version of the BCP. Subsequent treatment of the self-assembled BCP with sequential infiltration synthesis yields sub-10 nm AlOx lines.

RESUMEN

In this work, we have undertaken evaluation of the lithography property of a recently available chemically amplified resist (CAR) resist, UV1116 supplied by Rohm and Haas Company. Systematic study of the EBL property such as sensitivity, contrast, high resolution limit and dense capability, as well as resistance to plasma dry etching has been carried out. In comparison with the performance of UVIII, we conclude that the UV1116 can be a good alternative with better lithography quality.

RESUMEN

We present the fabrication of 150 nm half-pitch Si grating templates by reactive ion etch (RIE), which are used in nanoimprint lithography (NIL) for high groove density gratings in SU-8 plastic. The etch properties such as the etch rate, profile and etching selectivity of Si over Cr as etch mask were carefully studied. Under the optimum condition Si gratings with 150 nm in linewidth, 480 nm in height and nearly 90 degree in verticality of the sidewall have been achieved. 150 nm half-pitch gratings on SU-8 were then successfully imprinted using the fabricated templates. The diffraction pattern of zeroth and first order from the SU-8 gratings was observed using a 266 nm laser beam. The developed nanofabrication technique in this work is applicable not only for templates but also for other nanostructures in silicon.