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1.
Opt Express ; 21(1): 256-62, 2013 Jan 14.
Artículo en Inglés | MEDLINE | ID: mdl-23388918

RESUMEN

This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0V(pp) and 0.75-2.15V respectively.

2.
Opt Express ; 20(26): B462-9, 2012 Dec 10.
Artículo en Inglés | MEDLINE | ID: mdl-23262889

RESUMEN

We present for the first time a high performance APD-based linear burst-mode receiver (BM-RX) with a record wide dynamic range of 31 dB. The APD multiplication factor is controlled from burst to burst within 60 ns by an on-chip self-generated M-control signal. In the experiment, a total optical budget of 54 dB is achieved with a single SOA-based reach extender for 10 Gb/s upstream. With electronic dispersion compensation, the APD linear BM-RX with a wide dynamic range relaxes the requirement on optical components and lowers the system cost, especially at the optical network unit (ONU) side.

3.
Opt Express ; 19(26): B594-603, 2011 Dec 12.
Artículo en Inglés | MEDLINE | ID: mdl-22274076

RESUMEN

This paper presents a high performance DC-coupled 10 Gbit/s APD-based optical burst-mode receiver (BM-RX) for symmetric 10G-GPONs. The BM-RX can handle upstream bursts with a loud/soft range wider than 24.0 dB, and the measured sensitivity is -30.0 dBm at BER = 10(-3) after a start of burst settling time no longer than 51 ns. This paper also investigates, for the first time, the inter-burst guard time required for a 10 Gbit/s BM-RX with auto-reset generation, while the PON operates upstream at a high raw BER and is using FEC.

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