RESUMEN
Surface-Enhanced Raman Spectroscopy (SERS) is a powerful, non-destructive technique for enhancing molecular spectra, first discovered in 1974. This study investigates the enhancement of Raman signals from single- and few-layer molybdenum disulfide (MoS2) when interacting with silver nanoparticles. We synthesized a MoS2 membrane primarily consisting of monolayers and bilayers through a wet chemical vapor deposition method using metal salts. The silver nanoparticles were either directly grown on the MoS2 membrane or placed beneath it. Raman measurements revealed a significant increase in signal intensity from the MoS2 membrane on the silver nanoparticles, attributed to localized surface plasmon resonances that facilitate SERS. Our results indicate that dichalcogenide/plasmonic systems have promising applications in the semiconductor industry.
RESUMEN
THz radiation emitted by ferromagnetic/non-magnetic bilayers is a new emergent field in ultra-fast spin physics phenomena with a lot of potential for technological applications in the terahertz (THz) region of the electromagnetic spectrum. The role of antiferromagnetic layers in the THz emission process is being heavily investigated at the moment. In this work, we fabricate trilayers in the form of Co/CoO/Pt and Ni/NiO/Pt with the aim of studying the magnetic properties and probing the role of very thin antiferromagnetic interlayers like NiO and CoO in transporting ultrafast spin current. First, we reveal the static magnetic properties of the samples by using temperature-dependent Squid magnetometry and then we quantify the dynamic properties with the help of ferromagnetic resonance spectroscopy. We show magnetization reversal that has large exchange bias values and we extract enhanced damping values for the trilayers. THz time-domain spectroscopy examines the influence of the antiferromagnetic interlayer in the THz emission, showing that the NiO interlayer in particular is able to transport spin current.
RESUMEN
Co/CoO multilayers are fabricated by means of radio-frequency magnetron sputtering. For the formation of each multilayer period, a Co layer is initially produced followed by natural oxidation. Platinum is used not only as buffer and capping layers, but also in the form of intermediate ultrathin layers to enhance perpendicular magnetic anisotropy. Three samples are compared with respect to the magnetic anisotropies and exchange bias between 4-300 K based on superconducting quantum interference device magnetometry measurements. Two of the multilayers are identical Co/CoO/Pt ones; one of them, however, is grown on a Co/Pt "magnetic substrate" to induce perpendicular magnetic anisotropy via exchange coupling through an ultrathin Pt intermediate layer. The third multilayer is of the form Co/CoO/Co/Pt. The use of a "magnetic substrate" results in the observation of loops with large remanence when the field applies perpendicular to the film plane. The CoO/Co interfaces lead to a significant exchange bias at low temperatures after field cooling. The largest exchange bias was observed in the film with double Co/CoO/Co interfaces. Consequently, significant perpendicular anisotropy coexists with large exchange bias, especially at low temperatures. Such samples can be potentially useful for applications related to spintronics and magnetic storage.
RESUMEN
Radio frequency magnetron sputtering conducted in a high vacuum with a base pressure of 1×10-6 mbar was used to deposit ultrathin palladium films on Corning glass. The thickness of these films ranged from 0.4 to 13 nanometers. PdO films were produced after being post-annealed in a furnace at temperatures of 530 degrees Celsius in the presence of air. The results of an atomic force microscopy study showed that the material possessed a high crystalline quality with a low roughness. When looking at Tauc plots to determine the position of the direct optical band gap, the thicker films show a value that is relatively close to 2.2 eV. When the film thickness was reduced all the way down to 0.7 nm, a significant "blue shift" of more than 0.5 eV was observed. In order to provide a more in-depth understanding of the experiment, theoretical calculations based on the Hartree-Fock approximation as applied to an electron-hole system were performed in the framework of the effective mass approximation. The findings are regarded as empirical proof of the existence of quantum confinement effects.
RESUMEN
Thin Titanium films were fabricated on quartz substrates by radio frequency magnetron sputtering under high vacuum. Subsequent annealing at temperatures of 600 ∘C in air resulted in single-phase TiO2 with the structure of rutile, as X-ray diffraction experiment demonstrates. Atomic-force microscopy images verify the high crystalline quality and allow us to determine the grain size even for ultrathin TiO2 films. Rutile has a direct energy band gap at about 3.0-3.2 eV; however, the transitions between the valence and conduction band are dipole forbidden. Just a few meV above that, there is an indirect band gap. The first intense absorption peak appears at about 4 eV. Tauc plots for the position of the indirect band gap show a "blue shift" with decreasing film thickness. Moreover, we find a similar shift for the position of the first absorbance peak studied by the derivative method. The results indicate the presence of quantum confinement effects. This conclusion is supported by theoretical calculations based on a combination of the effective mass theory and the Hartree Fock approximation.
RESUMEN
Ultrathin NiO films in the thickness range between 1 and 27 nm have been deposited on high-quality quartz substrates by direct magnetron sputtering under a rough vacuum with a base pressure of 2 × 10-2 mbar. The sputtering target was metallic Ni; however, due to the rough vacuum a precursor material was grown in which most of Ni was already oxidized. Subsequent short annealing at temperatures of about 600 °C in a furnace in air resulted in NiO with high crystallinity quality, as atomic force microscopy revealed. The images of surface morphology showed that the NiO films were continuous and follow a normal grain growth mode. UV-Vis light absorption spectroscopy experiments have revealed a blue shift of the direct band gap of NiO. The band gap was determined either by Tauc plots (onset) or by the derivative method (highest rate of absorbance increase just after the onset). The experimental results are interpreted as evidences of quantum confinement effects. Theoretical calculations based on Hartree Fock approximation as applied for an electron-hole system, in the framework of effective mass approximation were carried out. The agreement between theory and experiment supports the quantum confinement interpretation.
RESUMEN
Cobalt-based multilayers with excellent sequencing are grown via radiofrequency magnetron sputtering with the use of one Co target and natural oxidation. The Co layers are continuous, fully textured {111} and have the face centered cubic structure. At the end of deposition of each Co layer air is let to flow into the vacuum chamber via a fine (leak) valve. The top of Co is oxidized. The oxidized layers consist of cubic CoO crystallites. Near the film surface hexagonal Co(OH)2 is also detected. Magneto-optical Kerr effect hysteresis loops show in-plane magnetized films. The magnetic saturation field in the out-of-plane measurements is large exceeding 12 kOe. This observation supports indirectly the fact that Co is face centered cubic; if it was c-axis textured hexagonal the magnetocrystalline anisotropy would be large resulting in smaller values of the saturation field. As the Co-layer thickness decreases the in-plane loops show reduced remanence, slow approach to magnetic saturation and the out-of-plane loops show inverted hysteresis and/or crossing loop features with sizeable remanence. The effects are discussed with respect to the enhanced orbital magnetic moment of Co and the antiferromagnetic coupling between Co spins at the Co/CoO interface.
RESUMEN
We report on the growth of thin Ni films by radio frequency magnetron sputtering in Ar-plasma. The growth temperature was about 350 K and the films were deposited on various substrates such as glass, silicon, sapphire and alumina. The thickness of the thinnest films was estimated by the appearance of Kiessig fringes up to about 2theta = 8 degrees in the small-angle X-ray diffraction pattern, as expected for high-quality atomically-flat thin films. With the help of this, a quartz balance system was calibrated and used for measuring the thickness of thicker samples with an accuracy of better than 5%. Structural characterization via X-ray diffraction and high resolution transmission electron microscopy revealed an Ar-gas pressure window, where single phase hcp Ni films may be grown. The magnetic response of the Ni films was checked at room temperature via a newly established and fully automatic polar magneto-optic Kerr effect magnetometer. The hcp films show no magnetic response. Interestingly, the magnetic saturation field of fcc films deposited at low Ar pressure is comparable to the one of bulk Ni, while the one of fcc films deposited at high Ar pressures is decreased, revealing the presence of residual strain in the films. Finally, it is shown that it is possible to form films which contain magnetic Ni fcc nanoparticles in a non-magnetic hcp matrix, i.e., a system interesting for technological applications demanding a single Ni target for its production.
RESUMEN
The orientation of the lamellae formed by the phase separation of symmetric diblock copolymer thin films is strongly affected by the wetting properties of the polymer blocks with respect to the substrate. On bare silicon wafers the lamellae of polystyrene-b-polymethylmethacrylate thin films tend to order parallel to the wafer surface, with the polymethylmethacrylate block preferentially wetting silicon. We have developed a methodology for inducing the arrangement of lamellae perpendicular to the substrate by using chemically modified substrates. This is done by chemisorbing a self-assembled monolayer of thiol-terminated alkane chains on thin gold films deposited on silicon wafers. We also show that it is possible to spatially control the perpendicular orientation of the lamellae at sub-micron length scales by using simple chemical patterns and etch them, in order to produce nanolithographic templates. This method may be of great technological interest for the preparation of well-defined templates using block copolymer thin films.
RESUMEN
Pioneer works in ultrathin magnetic films have shown perpendicular magnetic domains in the demagnetized state. The source of this perpendicular anisotropy is the interface anisotropy developed at the interface. Similar domains could be observed in tetragonally distorted ultrathin films due to the magnetoelastic anisotropy. On the other hand, single-crystalline hexagonal close packed (hcp) Co films when grown epitaxially with the c-axis oriented perpendicular to the film plane may show perpendicular stripe magnetic domains even up to a thickness of about 500 nm. In that case the source of perpendicular anisotropy was the magnetocrystalline anisotropy of bulk Co, which favors the c-axis. In this work, we have grown by radio frequency magnetron sputtering Co films in the thickness range 15-4500 nm. We have used various substrates, such as Corning glass, silicon and Al-foil. The substrate temperature was about 350 K. The films have been found by X-ray diffraction experiments to present various structures and textures depending on the preparation conditions, mainly the Ar-pressure and deposition rate. Stripe- and labyrinth-like domain configurations are observed in films textured along the c-axis, and in films with a mixture of hcp and fcc grains, repectively. Films which show mainly fcc or amorphous structure do not form perpendicular domains. The results are discussed with respect to magnetization loops.
RESUMEN
Patterning of semiconductors results in the fabrication of micro- and nano-structures, which are desired in modern technologies. Such a patterning is usually realized with the help of e-beam-, high-energy ion-, X-ray- or laser-assisted techniques, which demand expensive equipments. In this work we present a simple cost-effective method realized via a radio-frequency driven magnetron-sputtering head in high vacuum. The target is a silicon wafer masked with metallic grids. If the grid is magnetic, e.g., nickel, it is attracted by the magnetic forces of the magnetron, otherwise, magnetic clamps are used. Soft sputtering conditions, i.e., 30-100 Watts are used and the result is a well-ordered micropatterning of the surface with nicely formed pits the size of which is entirely determined by the grid size and the depth by the sputtering power and time. The pits are monitored with the help of Optical and Atomic Force Microscopy. If the masked micropatterned silicon wafer is then used as a substrate, the pits may be partially filled by a material. As a first example we present square-like Co microstructures. The magnetic signal of these Co microstructures is recorded with the help of a computer-driven magneto-optic Kerr effect home-made magnetometer. This patterned material may be used in magnetic recording technology. More examples include the formation of Cu-microcolumns and Pt film microframeworks. For the latter ones, an etching process is applied to prepare porous silicon networks with photoluminescence, which may be used in optoelectronics.
RESUMEN
Nanoscale Ni films in the thickness range 15-500 nm were grown on various substrates, such as amorphous glass, single crystalline silicon and sapphire, and polycrystalline alumina, at a temperature of about 350 K by radio frequency magnetron sputtering. It is demonstrated, via X-ray diffraction and high-resolution transmission electron microscopy, that there is an Ar-gas pressure window that favors the growth of stable single-phase hexagonal nanocrystalline Ni films regardless of the film thickness and the kind of the substrate. At lower or higher Ar pressures the films grow in the regular face centered cubic phase of Ni. The structural habits are attributed to differences in the kinetic energy of the Ni atoms impinging on the substrates. Superconducting quantum interference device magnetometry measurements reveal that the hexagonal films show zero magnetic response down to liquid Helium temperature. This result is discussed with respect to earlier first principle calculations and to experimental results on Ni nanoparticles.