RESUMEN
We show that nanoimprint lithography combined with electron-beam evaporation provides a cost-efficient, rapid, and reproducible method to fabricate conical nanostructures with very sharp tips on flat surfaces in high volumes. We demonstrate the method by preparing a wafer-scale array of gold nanocones with an average tip radius of 5 nm. Strong local fields at the tips enhance the second-harmonic generation by over 2 orders of magnitude compared with a nonsharp reference.
RESUMEN
The increase in semiconductor conductivity that occurs when a hard indenter is pressed into its surface has been recognized for years, and nanoindentation experiments have provided numerous insights into the mechanical properties of materials. In particular, such experiments have revealed so called pop-in events, where the indenter suddenly enters deeper into the material without any additional force being applied; these mark the onset of the elastic-plastic transition. Here, we report the observation of a current spike--a sharp increase in electrical current followed by immediate decay to zero at the end of the elastic deformation--during the nanoscale deformation of gallium arsenide. Such a spike has not been seen in previous nanoindentation experiments on semiconductors, and our results, supported by ab initio calculations, suggest a common origin for the electrical and mechanical responses of nanodeformed gallium arsenide. This leads us to the conclusion that a phase transition is the fundamental cause of nanoscale plasticity in gallium arsenide, and the discovery calls for a revision of the current dislocation-based understanding of nanoscale plasticity.
Asunto(s)
Arsenicales/química , Galio/química , Nanoestructuras/química , Nanoestructuras/ultraestructura , Nanotecnología/métodos , Módulo de Elasticidad , Campos Electromagnéticos , Sustancias Macromoleculares/química , Ensayo de Materiales , Conformación Molecular , Tamaño de la Partícula , Estrés Mecánico , Propiedades de SuperficieRESUMEN
Nanoimprint lithography has the potential to cost efficiently realize patterns with extremely narrow linewidth over a large area. A significant challenge to achieving this target is the fabrication of nanoimprint templates. The cost and writing time of conventional electron beam lithography for direct writing of the templates rapidly increases as the patterned area increases and the linewidth decreases. We have developed a novel process for creating narrow linewidth nanopatterns. This process is based on conformal deposition of thin films on seed nanopatterns. We have demonstrated the process by fabricating nanosized loops and lines. The linewidth of the structures can be tuned precisely, and in our experiments it could be reduced to 20 nm. The closed loop structures are interesting, since this geometry is crucially important in many leading edge research fields such as negative refractive index materials, ultrahigh density memory applications and quantum rings. The fabricated template was subsequently used as a template in soft-stamp UV nanoimprint lithography to successfully replicate the structures in UV-curable resist.
RESUMEN
We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.
RESUMEN
A high-power dual-wavelength AlGaInAs / GaAs laser operating in a vertical external-cavity surface emitting geometry, grown by molecular beam epitaxy, is reported. The active regions of the laser are separated by an optical long-wave-pass filter to prevent absorption of short-wavelength radiation in the long-wavelength gain area. The maximum output power achieved at 15 degrees C was 0.75 W at lambda approximately 966 nm and 1.38 W at lambda approximately 1047 nm for the pump power of 21.2 W.
RESUMEN
High-power, continuous-wave operation at red wavelengths has been achieved with a vertical external cavity surface emitting laser based on the GaInP/AlGaInP/GaAs material system. Output power of 0.4W was obtained in a linearly polarized, circularly symmetric, diffraction-limited beam. A birefringent filter inserted in the cavity allowed tuning of the laser output spectrum over a 10nm range around 674nm.
RESUMEN
We report an InGaP/AlInGaP/GaAs microchip vertical-external-cavity surface emitting laser operating directly at red wavelengths and demonstrate its potential for array-format operation. Optical pumping with up to 3.3W at 532nm produced a maximum output power of 330mW at 675nm, in a single circularly-symmetric beam with M2<2. Simultaneous pumping with three separate input beams, generated using a diffractive optical element, achieved lasing from three discrete areas of the same chip. Output power of ~95mW per beam was obtained from this 3x1 array, each beam having a Gaussian intensity profile with M2<1.2. In a further development, a spatial light modulator allowed computer control over the orientation and separation of the pump beams, and hence dynamic control over the configuration of the VECSEL array.