1.
Rev Sci Instrum
; 92(1): 014903, 2021 Jan 01.
Artículo
en Inglés
| MEDLINE
| ID: mdl-33514228
RESUMEN
We present a four-probe setup for measuring temperature of Joule-heated silicon in two independent ways from the same voltage measurement: a method using the thermal dependence of resistivity and a method based on the measured sheet power density. The two methods are compared to optical temperature measurements made by fitting a gray-body model onto data from a commercial spectrometer. The two four-probe temperature measurements are conducted from 890 K to 1540 K, and they converge at temperatures above 1400 K indicating a high degree of self-consistency.