RESUMEN
This work describes the spray pyrolysis deposition of PbSe films, using as-prepared PbSe colloids as the starting solution. The PbSe colloids were prepared by using the alkahest approach, where Pb and Se precursors were made to react with the following green polyols: glycerin, ethylene glycol, and propylene glycol, to subsequently spray them onto glass substrates. The results of the characterization indicated that amine or thiol groups-free and single-phase rock-salt cubic PbSe powder was obtained, producing nanocrystals 16-30 nm in size. X-ray diffraction also showed that the PbSe films containing PbSeO3 and PbO·xH2O as impurity phases were produced during the deposition. The morphology of the powders and films was developed by a self-assembly process, in which the primary PbSe nanoparticles self-assemble to produce peanut-like microstructures. Additionally, a non-continuous and porous feature was formed in the thick films. Certain films revealed optical structures characterized by broad- and low-intensity bands resembling an exciton-like behavior. This could be attributed to the presence of nanocrystals with a size less than the Bohr radius, indicating reminiscent quantum effects. The results suggest that the usage of colloidal dispersions as spray solutions represents an effective approach to forming PbSe films, as well as that the synthesis method allows for the elimination of thiol and amine groups before deposition, significantly simplifying the process.
RESUMEN
This work describes the growth of siliconâ»silicon carbide nanoparticles (Siâ»SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Siâ»SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbonâ»silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.