RESUMEN
The adsorption of formaldehyde (HCHO) on Pt(111) and Pt(100) electrodes was examined by cyclic voltammetry (CV) and in situ scanning tunneling microscopy (STM) in 0.1 M HClO(4). The extent of HCHO adsorption at both Pt electrodes was evaluated by comparing the CVs, particularly for the hydrogen adsorption and desorption between 0.05 and 0.4 V, obtained in 0.1 M HClO(4) with and without HCHO. The adsorption of HCHO on these Pt electrodes was significant only when [HCHO] >/= 10 mM. Adsorbed organic intermediate species acted as poisons, blocking Pt surfaces and causing delays in the oxidation of HCHO. Compared to Pt(111), Pt(100) was more prone to poisoning, as indicated by a 200 mV positive shift of the onset of HCHO oxidation. However, Pt(100) exhibited an activity 3 times higher than that of Pt(111), as indicated by the difference in peak current density of HCHO oxidation. Molecular resolution STM revealed highly ordered structures of Pt(111)-( radical7 x radical7)R19.1 degrees and Pt(100)-( radical2 x radical2) in the potential region between 0.1 and 0.3 V. Voltammetric measurements further showed that the organic poisons produced by HCHO adsorption behaved differently from the intentionally dosed CO admolecules, which supports the assumption for the formation of HCO or COH adspecies, rather than CO, as the poison. On both Pt electrodes, HCHO oxidation commenced preferentially at step sites at the onset potential of this reaction, but it occurred uniformly at the peak potentials.
RESUMEN
In situ scanning tunneling microscopy (STM) and cyclic voltammetry (CV) were employed to examine the underpotential deposition (UPD) of cadmium on a rhodium(111) electrode in sulfuric and hydrochloric acids. The (bi)sulfate and chloride anions in the electrolytes played a main role in controlling the number and arrangement of Cd adatoms. Deposition of Cd along with hydrogen adsorption occurred near 0.1 V (vs reversible hydrogen electrode) in either 0.05 M H2SO4 or 0.1 M HCl containing 1 mM Cd(ClO4)2. These coupled processes resulted in an erroneous coverage of Cd adatoms. The process of Cd deposition shifted positively to 0.3 V and thus separated from that of hydrogen in 0.05 M H2SO4 containing 0.5 M Cd2+. The amount of charge (80 microC/cm2) for Cd deposition in 0.5 M Cd2+ implied a coverage of 0.17 for the Cd adatoms, which agreed with in situ STM results. Regardless of [Cd2+], in situ STM imaging revealed a highly ordered Rh(111)-(6 x 6)-6Cd + HSO4- or SO42- structure in sulfuric acid,. In hydrochloric acid, in situ STM discerned a (2 x 2)-Cd + Cl structure at potentials where Cd deposition commenced. STM atomic resolution showed roughly one-quarter of a monolayer of Cd adatoms were deposited, ca. 50% more than in sulfuric acid. Dynamic in situ STM imaging showed potential dependent, reversible transformations between the (6 x 6) Cd adlattices and (square root 3 x square root 7)-(bi)sulfate structure, and between (2 x 2) and (square root 7 x square root 7)R19.1 degrees -Cl structures. The fact that different Cd structures observed in H2SO4 and HCl entailed the involvement of anions in Cd deposition, i.e. (bi)sulfate and chloride anions were codeposited with Cd adatoms on Rh(111).
RESUMEN
In situ scanning tunneling microscopy (STM) was used to examine the spatial structures of n-alkane thiols (1-hexanethiol, 1-nonanethiol, and 1-octahexanethiol) and arylthiols (benzenethiol and 4-hydroxybenzenethiol) adsorbed on well-ordered Pt111 electrodes in 0.1 M HClO4. The electrochemical potential and molecular flux were found to be the dominant factors in determining the growth mechanisms, final coverages, and spatial structures of these organic adlayers. Depending on the concentrations of the thiols, deposition of self-assembled monolayers (SAMs) followed either the nucleation-and-growth mechanism or the random fill-in mechanism. Low and high thiol concentrations respectively produced two ordered structures, (2 x 2) and (square root of 3 x square root of 3)R30 degrees , between 0.05 and 0.3 V. On average, an ordered domain spanned 500 A when the SAMs were made at 0.15 V, but this dimension shrank substantially once the potential was raised above 0.3 V. This potential-induced order-to-disorder phase transition resulted from a continuous deposition of thiols, preferentially at domain boundaries of (square root of 3 x square root of 3 x )R30 degrees arrays. All molecular adlayers were completely disordered by 0.6 V, and this restructuring event was irreversible with potential modulation. Since all thiols were arranged in a manner similar to that adopted by sulfur adatoms (Sung et al. J. Am. Chem. Soc. 1997, 119, 194), it is likely that they were adsorbed mainly through their sulfur headgroups in a tilted configuration, irrespective of the coverage. Both the sulfur and phenyl groups of benzenethiol admolecules gave rise to features with different corrugation heights in the molecular-resolution STM images. All thiols were adsorbed strongly enough that they remained intact at a potential as negative as -1.0 V in 0.1 M KOH.