RESUMEN
Ammonia is a promising carbon-free hydrogen carrier. Owing to their nickel-rich anodes and high operating temperatures, solid oxide fuel cells (SOFCs) can directly utilize NH3 fuel-direct-ammonia SOFCs (DA-SOFCs). Lowering the operating temperature can diversify application areas of DA-SOFCs. We tested direct-ammonia operation using two types of thin-film SOFCs (TF-SOFCs) under 500 to 650°C and compared these with a conventional SOFC. The TF-SOFC with a nickel oxide gadolinium-doped ceria anode achieved a peak power density of 1330 mW cm-2 (NH3 fuel under 650°C), which is the best performance reported to date. However, the performance difference between the NH3 and H2 operations was significant. Electrochemical impedance analyses, ammonia conversion quantification, and two-dimensional multi-physics modeling suggested that reduced ammonia conversion at low temperatures is the main cause of the performance gap. A comparative study with previously reported DA-SOFCs clarified that incorporating a more active ammonia decomposition catalyst will further improve low-temperature DA-SOFCs.
RESUMEN
Obtaining a catalyst with high activity and thermal stability is essential for high-performance energy conversion devices operating at an elevated temperature. Herein, the design and fabrication of a heterogeneous catalyst with an ultrathin CeO2 overlayer via atomic layer deposition (ALD) on Pt electrodes for low-temperature solid oxide fuel cells (LT-SOFCs) is reported. The cell with a CeO2-overcoated (five ALD cycles) Pt cathode shows lower activation resistance by 50% after a 10 h operation and higher thermal stability by a factor of 2 compared with the cell with a Pt-only cathode, which is known to be the best single catalyst at 450 °C. Eventually, a thin-film SOFC with a highly active and stable CeO2-overcoated cathode based on an anodized aluminum oxide (AAO) substrate demonstrates a high peak power density of 800 mW cm-2 at 500 °C, which is the highest performance ever reported for an AAO-based SOFC at this temperature.
RESUMEN
Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.