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1.
Materials (Basel) ; 16(12)2023 Jun 13.
Artículo en Inglés | MEDLINE | ID: mdl-37374534

RESUMEN

The luminescent properties of epitaxial Cu2O thin films were studied in 10-300 K temperature range and compared with the luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially via the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown using the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650-680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the thin film sample. The existence of the domains of crystallites with different orientations determines the polarization of luminescence. The PL of both Cu2O thin films and single crystals is characterized by negative thermal quenching in the low-temperature region; the reason of this phenomenon is discussed.

2.
Nanoscale Res Lett ; 7(1): 609, 2012 Nov 05.
Artículo en Inglés | MEDLINE | ID: mdl-23127157

RESUMEN

: We report photoreflectance (PR) and photoluminescence (PL) investigations of the electronic and polarization properties of different aspect ratio (height/diameter) InGaAs quantum rods (QRs) embedded in InGaAs quantum wells (QWs). These nanostructures were grown by molecular beam epitaxy using As2or As4sources. The impact of the As source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast between the QR material and the surrounding well. Polarized PR and PL measurements reveal that the polarization has a preferential direction along the [11¯0] crystal axis with a large optical anisotropy of about 60% in the (001) plane for high aspect ratio (4.1:1) InGaAs QRs. As a result, in PL spectra, the transverse magnetic mode dominated (11¯0)-cleaved surfaces (TM[001]>TE[110]), whereas the transverse electric mode prevailed for (110)-cleaved surfaces (TM[001]

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