RESUMEN
The high transmittance and low reflectance of monolayer hexagonal boron nitride (hBN) lead to its invisibility under white-light, causing serious troubles in the search, transfer, and fabrication of 2D material devices. In this work, we demonstrate enhancing the contrast of hBN on a transparent substrate by simulation and experimental observation, where the highest contrast is obtained by using a polymer-based interfacial layer on a polydimethylsiloxane (PDMS) substrate. The simulation result reveals that the contrast under short wavelength light is higher than that under long wavelength. To confirm this, the red-green-blue components are extracted from the optical color image. The blue component image shows an hBN flake clearly on the substrate, while the hBN flake fades on the green and red components. Moreover, the contrast on transparent substrates have only positive value, while opaque substrates cause both negative and positive contrast depending on the thickness of the interfacial layer. Thus, the high contrast (â¼4.5%) of hBN on the PDMS substrate enables us to observe mono- and few-layer hBN flakes under white-light illumination by an optical microscope.
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Much research has been done on reliable and low-cost electrocatalysts for hydrogen generation by water splitting. In this study, we synthesized thin films of silver selenide (Ag2Se) using a simple thermal evaporation route and demonstrated their electrocatalytic hydrogen evolution reaction (HER) activity. The Ag2Se catalysts show improved electrochemical surface area and good HER electrocatalytic behavior (367 mV overpotential @ 10 mA·cm-2, exchange current density: ~1.02 × 10-3 mA·cm-2, and Tafel slope: 53 mV·dec-1) in an acidic medium). The reliability was checked in 0.5 M sulfuric acid over 20 h. Our first-principles calculations show the optimal energy of hydrogen adsorption, which is consistent with experimental results. The works could be further extended for finding a new catalyst by associating the selenide, sulfide or telluride-based materials without complex catalyst synthesis procedures.
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Black Phosphorus (BP) is an excellent material from the post graphene era due to its layer dependent band gap, high mobility and high Ion/Ioff. However, its poor stability in ambient poses a great challenge for its practical and long-term usage. The optical visualization of the oxidized BP is the key and the foremost step for its successful passivation from the ambience. Here, we have conducted a systematic study of the oxidation of the BP and developed a technique to optically identify the oxidation of the BP using Liquid Crystal (LC). It is interesting to note that we found that the rapid oxidation of the thin layers of the BP makes them disappear and can be envisaged by using the alignment of the LC. The molecular dynamics simulations also proved the preferential alignment of the LC on the oxidized BP. We believe that this simple technique will be effective in passivation efforts of the BP, and will enable it for exploitation of its properties in the field of electronics.
RESUMEN
Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS2. The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS2 flakes in our BP/WS2 van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 104, temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS2 van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS2 van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.
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Here, we report the synthesis of a vertical MoSe2/WSe2 p-n heterostructure using a sputtering-CVD method. Unlike the conventional CVD method, this method produced a continuous MoSe2/WSe2 p-n heterostructure. WSe2 and MoSe2 back-gated field effect transistors (FETs) exhibited good gate modulation behavior, and high hole and electron mobilities of â¼2.2 and â¼15.1 cm2 V-1 s-1, respectively. The fabricated vertical MoSe2/WSe2 p-n diode showed rectifying I-V behavior with back-gate tunability. The rectification ratio of the diode was increased with increasing gate voltage, and was increased from â¼18 to â¼1600 as the gate bias increased from -40 V to +40 V. This is attributed to the fact that the barrier height between p-WSe2 and n-MoSe2 is modulated due to the back-gate bias. The rectification ratio is higher than the previously reported values for the TMDC p-n heterostructure grown by CVD.
RESUMEN
[This corrects the article DOI: 10.1039/C8RA03398F.].