Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Más filtros











Base de datos
Intervalo de año de publicación
1.
Sci Rep ; 10(1): 9308, 2020 Jun 09.
Artículo en Inglés | MEDLINE | ID: mdl-32518243

RESUMEN

The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200-250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions. It was found that the quantum dot arrangement in compact groups provides the effective electron localization in Δx,y-valleys with an almost equal probability of finding an electron in the Si spacer and Ge barrier. As a result, the main channels of radiative recombination in the structures under study correspond to spatially direct optical transitions.

2.
Opt Lett ; 38(4): 492-4, 2013 Feb 15.
Artículo en Inglés | MEDLINE | ID: mdl-23455113

RESUMEN

In this Letter, we show functionalization of NiO-doped 7.5Li(2)O·2.5Na(2)O·20Ga(2)O(3)·35SiO(2)·35GeO(2) glass by space-selective nanocrystallization via exposure to the focused beam of a pulsed copper vapor laser (510.6 and 578.2 nm) at temperature close to the glass transition point (570°C). Irradiated areas drastically change their color, caused by electronic transitions of Ni(2+) dopant ions, without any alteration of the optical quality. Importantly, irradiated regions acquire broadband infrared luminescence (centered at about 1400 nm and possessing 400 nm effective bandwidth) typical of Ni(2+) ions in crystalline environment, and by positive change of refractive index (more than 10(-3)). Spectroscopic and diffractometric data of the irradiated regions indeed resemble those previously observed in thermally nanocrystallized glass, with Ni(2+) ions embedded in γ-Ga(2)O(3) nanocrystals. The results demonstrate the possibility of laser writing nanocrystallized multifunction patterns in germanosilicate glasses for the fabrication of active integrated devices.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA