RESUMEN
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.
RESUMEN
Magnetic sensing and imaging instruments are important tools in biological and material sciences. There is an increasing demand for attaining higher sensitivity and spatial resolution, with implementations using a single qubit offering potential improvements in both directions. In this article we describe a scanning magnetometer based on the nitrogen-vacancy center in diamond as the sensor. By means of a quantum-assisted readout scheme together with advances in photon collection efficiency, our device exhibits an enhancement in signal to noise ratio of close to an order of magnitude compared to the standard fluorescence readout of the nitrogen-vacancy center. This is demonstrated by comparing non-assisted and assisted methods in a T1 relaxation time measurement.