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Charge injection and retention in thin dielectric layers remain critical issues due to the great number of failure mechanisms they inflict. Achieving a better understanding and control of charge injection, trapping and transport phenomena in thin dielectric films is of high priority aiming at increasing lifetime and improving reliability of dielectric parts in electronic and electrical devices. Thermal silica is an excellent dielectric but for many of the current technological developments more flexible processes are required for synthesizing high quality dielectric materials such as amorphous silicon oxynitride layers using plasma methods. In this article, the studied dielectric layers are plasma deposited SiO x N y . Independently on the layer thickness, they are structurally identical: optically transparent, having the same refractive index, equal to the one of thermal silica. Influence of the dielectric film thickness on charging phenomena in such layers is investigated at nanoscale using Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy. The main effect of the dielectric film thickness variation concerns the charge flow in the layer during the charge injection step. According to the SiO x N y layer thickness two distinct trends of the measured surface potential and current are found, thus defining ultrathin (up to 15 nm thickness) and thin (15-150 nm thickness) layers. Nevertheless, analyses of KPFM surface potential measurements associated with results from finite element modeling of the structures show that the dielectric layer thickness has weak influence on the amount of injected charge and on the decay dynamics, meaning that pretty homogeneous layers can be processed. The charge penetration depth in such dielectric layers is evaluated to 10 nm regardless the dielectric thickness.

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A combination of time-resolved optical emission spectroscopy measurements and collisional-radiative modeling is used to investigate the phenomena occurring over multiple time scales in the frequency domain of a low-pressure, axially-asymmetric capacitively-coupled RF argon plasma with pulsed injection of hexamethyldisiloxane (HMDSO, Si2O(CH3)6). The collisional-radiative model developed here considers the population of argon 1s and all ten 2p levels (in Paschen's notation). The presence of HMDSO in the plasma is accounted for in the model by quenching of the argon 1s states by species generated by plasma processing of HMDSO, including HMDSO-15 (Si2O(CH3)5), acetylene (C2H2) and methane (CH4). Detailed analysis of the relative populations of Ar 2p states reveals cyclic evolutions of the electron temperature, electron density and quenching frequency that are shown to be linked to the kinetics of dust formation in Ar/HMDSO plasmas. Penning ionization of HMDSO and its fragments is found to be an important source of electrons for the plasma maintenance. It is at the origin of the cyclic formation/disappearance of the dust cloud, without attenuation of the phenomenon, as long as the pulsed injection of HMDSO is sustained. The multi-scale approach used in this study further reveals the straightforward relation of the frequency of HMDSO pulsed injection, in particular the HMDSO duty cycle, with the frequency of dust formation/disappearance cycle.

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Protein adsorption on solid surfaces is of interest for many industrial and biomedical applications, where it represents the conditioning step for micro-organism adhesion and biofilm formation. To understand the driving forces of such an interaction we focus in this paper on the investigation of the adsorption of bovine serum albumin (BSA) (optically non-absorbing, model protein) and DsRed (optically absorbing, naturally fluorescent protein) on silica surfaces. Specifically, we propose synthesis of thin protein layers by means of dip coating of the dielectric surface in protein solutions with different concentrations (0.01-5.0 g l-1). We employed spectroscopic ellipsometry as the most suitable and non-destructive technique for evaluation of the protein layers' thickness and optical properties (refractive index and extinction coefficient) after dehydration, using two different optical models, Cauchy for BSA and Lorentz for DsRed. We demonstrate that the thickness, the optical properties and the wettability of the thin protein layers can be finely controlled by proper tuning of the protein concentration in the solution. These results are correlated with the thin layer morphology, investigated by AFM, FTIR and PL analyses. It is shown that the proteins do not undergo denaturation after dehydration on the silica surface. The proteins arrange themselves in a lace-like network for BSA and in a rod-like structure for DsRed to form mono- and multi-layers, due to different mechanisms driving the organization stage.

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We present a proof of concept on the coupling of radio astronomical receivers and spectrometers with chemical reactors and the performances of the resulting setup for spectroscopy and chemical simulations in laboratory astrophysics. Several experiments including cold plasma generation and UV photochemistry were performed in a 40 cm long gas cell placed in the beam path of the Aries 40 m radio telescope receivers operating in the 41-49 GHz frequency range interfaced with fast Fourier transform spectrometers providing 2 GHz bandwidth and 38 kHz resolution. The impedance matching of the cell windows has been studied using different materials. The choice of the material and its thickness was critical to obtain a sensitivity identical to that of standard radio astronomical observations. Spectroscopic signals arising from very low partial pressures of CH3OH, CH3CH2OH, HCOOH, OCS, CS, SO2 (<10-3 mbar) were detected in a few seconds. Fast data acquisition was achieved allowing for kinetic measurements in fragmentation experiments using electron impact or UV irradiation. Time evolution of chemical reactions involving OCS, O2 and CS2 was also observed demonstrating that reactive species, such as CS, can be maintained with high abundance in the gas phase during these experiments.

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To understand the physical phenomena occurring at metal/dielectric interfaces, determination of the charge density profile at nanoscale is crucial. To deal with this issue, charges were injected applying a DC voltage on lateral Al-electrodes embedded in a SiN x thin dielectric layer. The surface potential induced by the injected charges was probed by Kelvin probe force microscopy (KPFM). It was found that the KPFM frequency mode is a better adapted method to probe accurately the charge profile. To extract the charge density profile from the surface potential two numerical approaches based on the solution to Poisson's equation for electrostatics were investigated: the second derivative model method, already reported in the literature, and a new 2D method based on the finite element method (FEM). Results highlight that the FEM is more robust to noise or artifacts in the case of a non-flat initial surface potential. Moreover, according to theoretical study the FEM appears to be a good candidate for determining charge density in dielectric films with thicknesses in the range from 10 nm to 10 µm. By applying this method, the charge density profile was determined at nanoscale, highlighting that the charge cloud remains close to the interface.

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Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

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The study of charge distribution on the surface and in the bulk of dielectrics is of great scientific interest because of the information gained on the storage and transport properties of the medium. Nevertheless, the processes at the nanoscale level remain out of the scope of the commonly used diagnostic methods. Atomic force microscopy (AFM) is currently applied for both injection and imaging of charges on dielectric thin films at the nanoscale level to answer the increasing demand for characterization of miniaturized components used in microelectronics, telecommunications, electrophotography, electrets, etc. However, the mechanisms for dielectric charging by AFM are not well documented, and an analysis of the literature shows that inappropriate mechanisms are sometimes presented. It is shown here that corona discharge, frequently pointed out as a likely mechanism for dielectric charging by AFM in tip-to-sample space mode, cannot develop in such small distances. Furthermore, a review of different mechanisms surmised to be at the origin of dielectric charging at the nanoscale level is offered. Field electron emission enhanced by thermionic emission is identified as a likely mechanism for dielectric charging at the nanoscale level. Experimental validation of this mechanism is obtained for typical electric field strengths in AFM.

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Microwave plasmas excited at electron-cyclotron resonance were studied in the 0.5-15 mTorr pressure range. In contrast with low-limit pressure conditions where the plasma emission highlights a fairly homogeneous spatial structure, a periodic spatial modulation (period ∼6.2 cm) appeared as pressure increased. This feature is ascribed to a local power deposition (related to the electron density) due to the presence of a standing electromagnetic wave created by the feed electromagnetic field (2.45 GHz) in the cavity formed by the reactor walls. Analysis of the electron energy probability function by Langmuir probe and optical emission spectroscopy further revealed the presence of a high-energy tail that showed strong periodic spatial modulation at higher pressure. The spatial evolution of the electron density and of the characteristic temperature of these high-energy electrons coincides with the nodes (maximum) and antinodes (minimum) of the standing wave. These spatially-modulated power deposition and electron heating mechanisms are then discussed.

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The controlled fabrication of Si nanocrystals embedded in thin silicon oxynitride films (<15 nm) on top of a silicon substrate has been realized by PPECVD with N(2)O-SiH(4) precursors. The effect of inert and oxidizing annealing processes on the Si nanocrystal spatial and size distributions is studied by coupling ellipsometry measurements and cross-sectional transmission electron microscopy observations. This study gives an interesting insight into the physics underlying the Si nanocrystal nucleation, growth and oxidation mechanisms. In particular, it evidences the presence in the as-deposited films of a high density of small amorphous Si particles that crystallize after high temperature thermal annealing. Annealing under oxidizing conditions is shown to be a powerful way to create tunnel oxides of good quality and controlled thickness needed to design future memory devices.

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The modeling of microwave-sustained discharges at atmospheric pressure is much less advanced than at reduced pressure (<10 Torr) because of the greater complexity of the mechanisms involved. In particular, discharge contraction, a characteristic feature of high-pressure discharges, is not well understood. To describe adequately this phenomenon, one needs to consider that the charged-particle balance in atmospheric-pressure discharges relies on the kinetics of molecular ions, including their dissociation through electron impact. Nonuniform gas heating plays a key role in the radial distribution of the density of molecular ions. The onset of contraction is shown to depend only on radially nonuniform gas heating. The radial nonuniformity of the electric field intensity also plays an important role allowing one, for instance, to explain the lower degree of contraction observed in microwave discharges compared to dc discharges. We present a numerical fluid-plasma model that aims to bring into relief the main features of discharge contraction in rare gases. It calls for surface-wave discharges because of their wide range of operating conditions, enabling a closer check between theory and experiment.