RESUMEN
Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na(2)O-SiO(2) bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.
Asunto(s)
Suministros de Energía Eléctrica , Galvanoplastia/instrumentación , Iones Pesados , Silicio/química , Silicio/efectos de la radiación , Sodio/química , Diseño de Equipo , Análisis de Falla de Equipo , IonesRESUMEN
A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.