RESUMEN
Spin currents of perpendicularly polarized spins (z spins) have received blooming interest for the potential in energy-efficient spin-orbit torque switching of perpendicular magnetization in the absence of a magnetic field. However, generation of z spins is limited mainly to magnetically or crystallographically low-symmetry single crystals that are hardly compatible with the integration to semiconductor circuits. This work reports efficient generation of z spins in sputter-deposited polycrystalline heavy metal devices via a new mechanism of broken electric symmetries in both the transverse and perpendicular directions. Both the damping-like and field-like spin-orbit torques of z spins can be tuned significantly by varying the degree of the electric asymmetries via the length, width, and thickness of devices as well as by varying the type of the heavy metals. The presence of z spins also enables deterministic, nearly-full, external-magnetic-field-free switching of a uniform perpendicularly magnetized FeCoB layer, the core structure of magnetic tunnel junctions, with high coercivity at a low current density. These results establish the first universal, energy-efficient, integration-friendly approach to generate z-spin current by electric asymmetry design for dense and low-power spin-torque memory and computing technologies and will stimulate investigation of z-spin currents in various polycrystalline materials.
RESUMEN
After decades of efforts, some fundamental physics for electrical switching of magnetization is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii-Moriya interaction (DMI) effect, which is the chiral coupling of orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The effective magnetic field of the long-range intralayer DMI on the perpendicular magnetization is out-of-plane and varies with the interfacial DMI constant, the applied in-plane magnetic fields, and the magnetic anisotropy distribution. Striking consequences of the effect include asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp in-plane magnetic field switching of perpendicular magnetization. Utilizing the intralayer DMI, we demonstrate programable, complete Boolean logic operations within a single spin-orbit torque device. These results will stimulate investigation of the long-range intralayer DMI effect in a variety of spintronic devices.
RESUMEN
Magnetic heterostructures with high spin-orbit torque efficiency and low impedance have great promise for low-power spintronic technologies. We report a symmetry-broken spin-orbit superlattice [Pt0.75Cu0.25/Co/Ta]n, in which the dampinglike spin-orbit torque efficiency accumulates linearly with the repeat number n and achieves a giant value of >200% when n = 16, which is 100 times stronger than that of a conventional magnetic heterostructure with a clean Pt (e.g., 2% at a resistivity of 7 µΩ cm). The giant spin-orbit torque effect arises predominantly from the spin Hall effect of Pt0.75Cu0.25. The anomalous Nernst effect increases remarkably as the repeat number n increases, implying a critical need to include the thermal effect in the analysis of magnetic superlattices and multilayers. The giant spin-orbit torque, low resistivity, and strong anomalous Nernst effect suggest the great potential of the superlattice [Pt0.75Cu0.25/Co/Ta]n for low-power memory and logic technologies as well as high-performance thermoelectric battery and sensor applications.
RESUMEN
Exploration of exotic spin polarizations in single crystals is of increasing interest. A current of longitudinal spins, the so-called "Dresselhaus-like" spin current, which is forbidden in materials lacking certain inversion asymmetries, is implied to be generated by a charge current at the interface of single-crystal CoFe. This work reports unambiguous evidence that there is no indication of spin current of any spin polarizations from the interface or bulk of single-crystalline CoFe and that the sin2φ second harmonic Hall voltage, which is previously assumed to signify Dresselhaus-like spin current, is not related to any spin currents but rather a planar Nernst voltage induced by a longitudinal temperature gradient within the sample. Such sin2φ signal is independent of large applied magnetic fields and interfacial spin-orbit coupling, inversely correlated to the heat capacity of the substrates and overlayers, quadratic in charge current, and appears also in polycrystalline ferromagnets. Strikingly, the planar Nernst effect (PNE) in the CoFe single crystal has a strong fourfold anisotropy and varies with the crystalline orientation. Such strong, anisotropic PNE has widespread impacts on the analyses of a variety of spintronic experiments and opens a new avenue for the development of PNE-based thermoelectric battery and sensor applications.