RESUMEN
Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.
RESUMEN
In this work, we report a self-assembly method to fabricate a single layer of Co nanorods to study their magnetostatic interaction behavior. The Co nanorods with cambered and flat tips were synthesized by using a solvothermal route and an alcohol-thermal method, respectively. Both of them represent hard magnetic features. Co nanorods with cambered tips have an average diameter of 10 nm and length of 100 nm with coercivity of 6.4 kOe, and flat-tip nanorods with a 30 nm diameter and 100 nm length exhibit a coercivity of 4.9 kOe. They are further assembled on the surface of water in assistance of surfactants. The results demonstrate that the assembly type is dependent on the magnetic induction lines direction. For Co nanorods with flat tips, most of magnetic induction lines are parallel to the length direction, leading to an assembly that is tip to tip. For Co nanorods with cambered tips, they are prone to holding together side by side for their random magnetic induction lines. Under an applied field, the Co nanorods with flat tips can be further aligned into a single layer of Co nanorods. Our work gives a possible mechanism for the magnetic interaction of Co nanorods and provides a method to study their magnetic behavior.
RESUMEN
A strong anisotropic magnetoresistance (AMR) effect induced by spin-orbit coupling is the basis for constructing a highly sensitive and reliable magnetic sensor. Presently, effective AMR enhancement in traditional films focuses on the modulation of the lattice or charge degree of freedom, leading to a general AMR ratio below 4%. Here, we demonstrate a different strategy to strengthen the AMR effect by tuning the orbital degree of freedom. By inserting an oxygen-affinitive Hf layer into a Ta/MgO/NiFe/MgO/Ta multilayer film, Fe-O orbital hybridization at the MgO/NiFe interface was modulated to trigger an effective orbital reconfiguration of Fe. In turn, the number of holes in the in-plane symmetric d orbits of Fe increased substantially, facilitating the s-d electron scattering to enhance the AMR ratio to 4.8%. By further micromachining the film into a Wheatstone bridge, we constructed a sensing element that displayed an ultrahigh sensitivity of 2.7 mV/V/Oe and a low noise detectability of 0.8 nT/âHz. These findings help to advance the development of orbit-governed AMR sensors and provide an alternative method for tuning other orbit-related physical effects.
RESUMEN
This study aimed to develop a novel magnetic chitosan/dopamine/Fe3O4 nano-adsorber (CS@PDA@Fe3O4) for the removal of heavy metal ions and organic dye molecules from aqueous solution. CS@PDA@Fe3O4 was prepared by surface modification of PDA/Fe3O4 nanoparticles with chitosan using IPTES as the cross-linker. The surface structure, composition, and properties of the CS@PDA@Fe3O4 nano-adsorber were characterized by elemental (EDS), spectroscopic (XRD, XPS, and FT-IR), magnetic intensity (VSM), surface and morphological (TEM and SEM) analyses. In order to study its adsorption behavior, equilibrium and kinetics studies were carried out through batch experiments. Additionally, the influences of the pH value, initial concentration, adsorbent dose, and contact time were also evaluated. The CS@PDA@Fe3O4 nano-adsorber exhibited high adsorption capacity especially for Cu(ii), with a maximum adsorption capacity of 419.6 mg g-1. The experimental data were well described by the Langmuir isotherm kinetic models.
RESUMEN
Tailoring magnetic anisotropy of ferromagnetic films is a critical issue in constructing energy-efficient and high-density magnetic memory devices. Presently, the effective tunability was focused on a single-ion-manipulated electronic structure evolution. Here, we reported a new strategy of dual-ion-tuned orbital structure and magnetic anisotropy of ferromagnetic films. N-doped Fe/MgO bilayer films were deposited on shape memory alloy substrates which can generate a significant lattice strain on the films. Before the N ions participate into the manipulation, the Fe/MgO film shows an in-plane magnetic anisotropy, which may be due to excessive Fe-O orbital hybridization. Interestingly, the N and O ions synergistically manipulate electronic coordination of the Fe layer, which can be further modified by the lattice strain through a charge transfer among N-Fe-O. Under such effect, the magnetic anisotropy of the film is switchable from in-plane to perpendicular magnetic anisotropy (PMA). The X-ray line dichroism (XLD) characterization reveals that the anisotropy regulation is related to Fe 3d orbital evolution: N-Fe orbital hybridization promotes the Fe dz2 orbital occupation effectively, which is beneficial in increasing PMA by strengthening Fe-O orbital hybridization along the out-of-plane direction. However, the compressive strain induces a N-Fe-O charge transfer and reduces the Fe dz2 electronic occupation, which weakens the PMA of films. These findings provide a new dimensionality for regulating orbital performance of ferromagnetic materials and developing strain-assisted memory devices.
RESUMEN
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.
RESUMEN
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like torques to the magnetization switching induced by the electrical current are still under debate. Here, we describe a device based on a symmetric Pt/FM/Pt structure, in which we demonstrate a strong damping-like torque from the spin Hall effect and unmeasurable field-like torque from Rashba effect. The spin-orbit effective fields due to the spin Hall effect were investigated quantitatively and were found to be consistent with the switching effective fields after accounting for the switching current reduction due to thermal fluctuations from the current pulse. A non-linear dependence of deterministic switching of average Mz on the in-plane magnetic field was revealed, which could be explained and understood by micromagnetic simulation.