RESUMEN
The influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization.
RESUMEN
The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.