RESUMEN
We present evidence for entangled solid vortex matter in a glassy state in a layered superconductor Bi2Sr2CaCu2O8+y containing randomly splayed linear defects. The interlayer phase coherence--probed by the Josephson plasma resonance--is enhanced at high temperatures, reflecting the recoupling of vortex liquid by the defects. At low temperatures in the vortex solid state, the interlayer coherence follows a boomerang-shaped reentrant temperature path with an unusual low-field decrease in coherence, indicative of meandering vortices. We uncover a distinct temperature scaling between in-plane and out-of-plane critical currents with opposing dependencies on field and time, consistent with the theoretically proposed "splayed-glass" state.
RESUMEN
We show that smooth domain walls in ultrathin ferromagnetic films can develop jaggedness even in the absence of random defects when confronted with a sufficiently large tilt between the uniaxial anisotropy direction and the external field. From the Kerr imaging of 0.7 nm thin Co films and from numerical simulations we report a previously unseen runaway fingerlike instability in a magnetic wall that begins on nanoscales but grows to macroscopic lengths for sufficiently large tilt angles. A threshold for the instability is controlled by the ferromagnet's parameters and the applied field.
RESUMEN
Nanotubes and nanowires with both elemental (carbon or silicon) and multi-element compositions (such as compound semiconductors or oxides), and exhibiting electronic properties ranging from metallic to semiconducting, are being extensively investigated for use in device structures designed to control electron charge. However, another important degree of freedom--electron spin, the control of which underlies the operation of 'spintronic' devices--has been much less explored. This is probably due to the relative paucity of nanometre-scale ferromagnetic building blocks (in which electron spins are naturally aligned) from which spin-polarized electrons can be injected. Here we describe nanotubes of vanadium oxide (VO(x)), formed by controllable self-assembly, that are ferromagnetic at room temperature. The as-formed nanotubes are transformed from spin-frustrated semiconductors to ferromagnets by doping with either electrons or holes, potentially offering a route to spin control in nanotube-based heterostructures.
RESUMEN
We assess the relative importance of orbital frustration at the pseudogap closing field H(pg). Using interlayer tunneling transport in pulsed magnetic fields nearly up to 60 T, we track the field-temperature (H-T) phase diagram for fields parallel ( parallel ab) and normal ( parallel c) to the layered structure of Bi(2)Sr(2)CaCu(2)O(8+y). In contrast to large orientational anisotropy of the superconducting state related to the orbital motion of Cooper pairs, we find anisotropy of H(pg) temperature independent and small, due solely to the g factor. The obtained Zeeman relation with the pseudogap temperature T small star, filled, g( parallel c)micro(B)H( parallel c)(pg)=g( parallel ab)micro(B)H( parallel ab)(pg) approximately k(B)T small star, filled, is fully consistent with the correlations only in the spin channel.
RESUMEN
Interlayer tunneling resistivity is used to probe the low-energy density-of-states (DOS) depletion due to the pseudogap in the normal state of Bi2Sr2CaCu2O8+y. Measurements up to 60 T reveal that a field that restores DOS to its ungapped state shows strikingly different temperature and doping dependencies from the characteristic fields of the superconducting state. The pseudogap closing field and the pseudogap temperature T small star, filled evaluated independently are related through a simple Zeeman energy scaling. These findings indicate a predominant role of spins over the orbital effects in the formation of the pseudogap.
RESUMEN
The stability of data bits in magnetic recording media at ultra-high densities is compromised by the thermal 'flips'--magnetic spin reversals--of nano-sized spin domains, which erase the stored information. Media that are magnetized perpendicular to the plane of the film, such as ultrathin cobalt films or multilayered structures, are more stable against thermal self-erasure than conventional memory devices. In this context, magneto-optical memories seem particularly promising for ultrahigh-density recording on portable disks, and bit densities of approximately 100 Gbit inch(-2) (ref. 7) have been demonstrated using recent advances in the bit writing and reading techniques. But the roughness and mobility of the magnetic domain walls prevents closer packing of the magnetic bits, and therefore presents a challenge to reaching even higher bit densities. Here we report that the strain imposed by a linear defect in a magnetic thin film can smooth rough domain walls over regions hundreds of micrometres in size, and halt their motion. A scaling analysis of this process, based on the generic physics of disorder-controlled elastic lines, points to a simple way by which magnetic media might be prepared that can store data at densities in excess of 1 Tbit inch(-2).
RESUMEN
Interaction of a field-driven magnetic domain wall with a correlated (line) defect is examined by Kerr imaging in subnanometer thin Co films. The line defect directs and confines the wall near the bottom of the effective potential trough U(eff), which competes with underlying random disorder that roughens the wall. We observe a kinetic "deroughening" with roughness exponent zeta approximately 0.1 well below zeta = 2/3 characteristic of random defects. Deroughening occurs on lengths greater than an inherent elastic screening length L(el), which is consistently explained by the restoring action of U(eff).
RESUMEN
We report on the c-axis resistivity rho(c)(H) in Bi(2)Sr(2)CaCu(2)O(8+delta) that peaks in quasistatic magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity sigma(c)(H), we find that the negative slope of rho(c)(H) above the peak is due to quasiparticle tunneling conductivity sigma(q)(H) across the CuO2 layers below H(c2). At high fields (a) sigma(q)(H) grows linearly with H, and (b) rho(c)(T) tends to saturate ( sigma(c) not equal0) as T-->0, consistent with the scattering at the nodes of the d-wave gap. A superlinear sigma(q)(H) marks the normal state above T(c).
RESUMEN
We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.