RESUMEN
In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu2O3 thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu2O3 thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu2O3/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu2O3 thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu2O3 thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.
RESUMEN
A high-field x-ray diffraction (HF-XRD) camera was developed to observe structural changes of magnetic materials in magnetic fields up to 10 T. The instrument mainly consists of a Debye-Scherrer-type camera with a diameter of 80.1 mm, a 10-T cryocooled superconducting magnet with a 100-mm room-temperature bore, an x-ray source, a power supply, and a chiller for the x-ray source. An x-ray detector (image plate) in the HF-XRD camera can be taken out and inserted into the magnet without changing the sample position. The performance of the instrument was tested by measuring the HF-XRD for silicon and ferromagnetic MnBi powders. A change of x-ray diffraction pattern was observed due to the magnetic orientation of MnBi, showing that the instrument is useful for studying field-induced orientation processes and structural properties of field-controlled materials.
RESUMEN
We investigated the hydrogen effect on superconductivity in the (Ni0.36Nb0.24Zr0.40)(100-x)H(x)(0 < or = x < or = 6.4) glassy alloys with nanoclusters, as a function of temperature. The resistivity of these alloys started to drop from onset temperature of around 9.5 K. The (Ni0.36Nb0.24Zr0.40)98.6H1.6 showed zero resistance at 2.1 K. However, the application of a magnetic field > 4.6 T arrested the drop of resistivity, showing the existence of superconductivity of type II. The maximum onset temperature of 11.3 K was observed at 4.4 at% H. The superconducting behavior of the glassy alloys would be associated with electron pair transport along zigzag paths, which link the shortened atomic -Ni-Ni-Ni- array in the Zr5Ni5Nb3 clusters, and tunneling among the clusters.
RESUMEN
A system was developed measuring x-ray powder diffraction in high magnetic fields up to 5 T and at temperatures from 283 to 473 K. The stability of the temperature is within 1 K over 6 h. In order to examine the ability of the system, the high-field x-ray diffraction measurements were carried out for Si and a Ni-based ferromagnetic shape-memory alloy. The results show that the x-ray powder diffraction measurements in high magnetic fields and at high temperatures are useful for materials research.
RESUMEN
High-field x-ray diffraction and magnetization measurements and differential thermal analysis (DTA) were carried out for polycrystalline MnBi with an NiAs-type hexagonal structure to investigate its magnetic and structural phase transitions. The lattice parameter a rapidly decreases below the spin reorientation temperature TSR(=90 K) in a zero magnetic field. The parameter c decreases gradually with decreasing temperature and exhibits an anomaly in the vicinity of TSR. By applying a magnetic field of 5 T, the parameter a increases by â¼0.05% when T