RESUMEN
At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D â¼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.
RESUMEN
We demonstrate polarization-independent resonant-enhancement of second harmonic generation (SHG) from multilayer Gallium Selenide (GaSe) on a silicon-based resonant metasurface. Two-dimensional hexagonal photonic lattice with circularly symmetric silicon meta-atoms are designed to achieve resonant field enhancement at the fundamental wavelength independent of the incident polarization direction. Such structures are however found to exhibit strong resonant field depolarization effects at the fundamental excitation fields resulting in modified nonlinear polarization components when compared to the native GaSe layer. Furthermore, the sub-wavelength metasurface designed to have resonances at the fundamental wavelengths act as a higher order diffraction grating at the second harmonic wavelength. Nonlinear wave propagation simulations show that the higher order diffracted SHG exhibit strong polarization dependent enhancement with characteristics very different from the native GaSe layer. In this context, polarization independent enhancement of the second harmonic signal is achieved only for the zeroth order diffracted component. Experimental study of second harmonic generation from the GaSe layer integrated with the silicon metasurface shows maximum nonlinear signal enhancement on-resonance with polarization dependence identical to the native GaSe layer by selectively detecting the zeroth-order diffracted component. This work shows that it is not sufficient to use symmetric meta-atoms in such 2D material integrated resonant metasurfaces for achieving polarization independent nonlinear optical enhancement. Depolarization of the resonant fields and higher-order diffraction at the nonlinear signal wavelength need to be considered as well.