RESUMEN

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive computing. We use a simple linear electrical circuit to mutually couple two SMTJs through their stochastic electrical transitions. When one SMTJ makes a thermally induced transition, the voltage across both SMTJs changes, modifying the transition rates of both. This coupling leads to significant correlation between the states of the two devices. Using fits to a generalized Néel-Brown model for the individual thermally bistable magnetic devices, we can accurately reproduce the behavior of the coupled devices with a Markov model.

RESUMEN

We report on the Dzyaloshinskii-Moriya (DMI) interaction at the interface between a ferromagnet and an oxide. We demonstrate experimentally that oxides can give rise to DMI. By comparison of systems comprised of Pt/Co90Fe10/oxide and Cu/Co90Fe10/oxide, we also show how oxidation of one interface can enhance and add to the total DMI of that generated by the Pt interface. This is due to the fact that the DMI on both interfaces promotes left-handed chirality. Finally, by use of ferromagnetic resonance spectroscopy, we show that the DMI and the spectroscopic splitting factor, which is a measure of the orbital momentum, are correlated. This indicates the importance of hybridization and charge transfer at the oxide interface for the DMI.

RESUMEN

Structural symmetry breaking in magnetic materials is responsible for the existence of multiferroics, current-induced spin-orbit torques and some topological magnetic structures. In this Letter we report that the structural inversion asymmetry (SIA) gives rise to a chiral damping mechanism, which is evidenced by measuring the field-driven domain-wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The DW dynamics associated with the chiral damping and those with Dzyaloshinskii-Moriya interaction (DMI) exhibit identical spatial symmetry. However, both scenarios are differentiated by their time reversal properties: whereas DMI is a conservative effect that can be modelled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing one to distinguish the physical mechanism. The chiral damping enriches the spectrum of physical phenomena engendered by the SIA, and is essential for conceiving DW and skyrmion devices owing to its coexistence with DMI (ref. ).

Asunto(s)

RESUMEN

Magnetization reversal by an electric current is essential for future magnetic data storage technology, such as magnetic random access memories. Typically, an electric current is injected into a pillar-shaped magnetic element, and switching relies on the transfer of spin momentum from a ferromagnetic reference layer (an approach known as spin-transfer torque). Recently, an alternative technique has emerged that uses spin-orbit torque (SOT) and allows the magnetization to be reversed without a polarizing layer by transferring angular momentum directly from the crystal lattice. With spin-orbit torque, the current is no longer applied perpendicularly, but is in the plane of the magnetic thin film. Therefore, the current flow is no longer restricted to a single direction and can have any orientation within the film plane. Here, we use Kerr microscopy to examine spin-orbit torque-driven domain wall motion in Co/AlOx wires with different shapes and orientations on top of a current-carrying Pt layer. The displacement of the domain walls is found to be highly dependent on the angle between the direction of the current and domain wall motion, and asymmetric and nonlinear with respect to the current polarity. Using these insights, devices are fabricated in which magnetization switching is determined entirely by the geometry of the device.