RESUMEN

Bismuth nanodendrites (BiNDs) were electrodeposited on planar gallium nitride (GaN) electrode via a differential pulse voltammetric technique to fabricate the non-enzymatic hydrogen peroxide (H2O2) sensor. SEM images revealed that the as-obtained BiNDs had numerous dendrite sub-branches, whose diameters ranged from 136 to 152nm. The BiNDs/GaN electrode showed linear amperometric responses for H2O2 in the concentration range from 10µM to 1mM with the sensitivity of 60.0µAmM-1cm-2. Another linear range was from 1 to 10mM with the sensitivity of 23.3µAmM-1cm-2. The limit of detection (LOD) was 5µM with the signal-to-noise ratio of 3. The applicability of the sensor was investigated to the H2O2 detection in real samples such as fetal bovine serum and milk, and the sensor exhibited excellent anti-interference capacity. The achieved results indicate that the as-prepared BiNDs/GaN sensor with good reproducibility and long-term stability was promising for detecting H2O2 in practical environments.