RESUMEN
This study presents the utilization of MoS2 as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS2 is discussed by the diffusion and phase transformation between Ru and Si via TEM diffraction and imaging. When the sample is heated to a high temperature such that MoS2 loses the ability to block the diffusion, Si diffuses through the MoS2 into the Ru layer, leading to the formation of Ru2Si3. Both multilayer and monolayer (1L) MoS2 exhibit exceptional diffusion-blocking ability up to 800 °C. Furthermore, plasma-treated 1L-MoS2 shows a slightly low diffusion-blocking temperature of 750 °C, while the dangling bonds in MoS2 improve the interfacial adhesion. These findings suggest that MoS2 holds great potential as a diffusion barrier for metal interconnects.