RESUMEN

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip voltage shows significant variation with tip position, and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. Our measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, graphene edges, structural defects and resist residues. Our scanning gate measurements also demonstrate graphene's excellent capability to sense the local electric field and charges.

RESUMEN

Individual metal alloy nanowires of constant diameter and high aspect ratio have previously been self-assembled at selected locations on atomic force microscope (AFM) probes by the method reported in Yazdanpanah et al (2005 J. Appl. Phys. 98 073510). This process relies on the room temperature crystallization of an ordered phase of silver-gallium. A parallel version of this method has been implemented in which a substrate, either an array of micromachined tips (similar to tips on AFM probes) or a lithographically patterned planar substrate, is brought into contact with a continuous, nearly planar film of melted gallium. In several runs, freestanding wires are fabricated with diameters of 40-400 nm, lengths of 4-80 µm, growth rates of 80-170 nm s( - 1) and, most significantly, with yields of up to 97% in an array of 422 growth sites. These results demonstrate the feasibility of developing a batch manufacturing process for the decoration of wafers of AFM tips and other structures with selectively patterned freestanding nanowires.

RESUMEN

There are a variety of methods for synthesizing or fabricating one-dimensional (1D) nanostructures containing heterojunctions between different materials. Here we review recent developments in the synthesis and fabrication of heterojunctions formed between different materials within the same 1D nanostructure or between different 1D nanostructures composed of different materials. Structures containing 1D nanoscale heterojunctions exhibit interesting chemistry as well as size, shape, and material-dependent properties that are unique when compared to single-component materials. This leads to new or enhanced properties or multifunctionality useful for a variety of applications in electronics, photonics, catalysis, and sensing, for example. This review separates the methods into vapor-phase synthesis, solution-phase synthesis, template-based synthesis, and other approaches, such as lithography, electrospinning, and assembly. These methods are used to form a variety of heterojunctions, including segmented, core/shell, branched, or crossed, from different combinations of semiconductor, metal, carbon, and polymeric materials.

Asunto(s)

Cristalización/métodos , Electroquímica/métodos , Nanoestructuras/química , Nanoestructuras/ultraestructura , Fotoquímica/métodos , Semiconductores , Electroquímica/instrumentación , Sustancias Macromoleculares , Ensayo de Materiales , Conformación Molecular , Nanotecnología , Tamaño de la Partícula , Fotoquímica/instrumentación , Propiedades de Superficie

RESUMEN

Loose graphene sheets, one to a few atomic layers thick, are often observed on freshly cleaved HOPG surfaces. A straightforward technique using electrostatic attraction is demonstrated to transfer these graphene sheets to a selected substrate. Sheets from one to 22 layers thick have been transferred by this method. One sheet after initial deposition is measured by atomic force microscopy to be only an atomic layer thick (∼0.35 nm). A few weeks later, this height is seen to increase to ∼0.8 nm. Raman spectroscopy of a single layer sheet shows the emergence of an intense D band which dramatically decreases as the number of layers in the sheet increase. The intense D band in monolayer graphene is attributed to the graphene conforming to the roughness of the substrate. The disruption of the C-C bonds within the single graphene layer could also contribute to this intense D band as evidenced by the emergence of a new band at 1620 cm(-1).

RESUMEN

This contribution describes the synthesis of gold nanorod (Au NR)/single-wall carbon nanotube (SWCNT) heterojunctions assembled directly on Si/SiOx substrates. SWCNTs are attached to amine-functionalized Si/SiOx substrates, and Au monolayer-protected clusters (MPCs) are adsorbed to the surface of SWCNTs through hydrophobic interactions. Seed-mediated reduction of HAuCl4 with ascorbic acid in the presence of cetyltrimethylammonium bromide (CTAB) onto the Au MPCs leads to the growth of larger Au nanostructures directly on the SWCNTs. Au NRs account for 19% of the nanostructures, some of which are attached directly to the sidewall and some at the ends of the SWCNTs. Raman spectroscopic measurements of SWCNTs before and after growth of the Au nanostructures reveal that the presence of Au leads to an approximately 50-fold enhancement of the Raman scattering signal. Combining 1D nanostructures of different materials (Au and carbon in this example) is of fundamental interest and may find use in nanoelectronics, chemical sensing, electrochemical, and spectroscopy applications.