RESUMEN
Ultrafast electro-optical conversion at nanoscale is of fundamental interest for information transfer and optical interconnects. Light emission from a quantum tunnel junction provides an opportunity owing to its unique capability of ultrafast response and small footprint. However, the main challenge to the wide adoption of the tunnel junction is its low emission efficiency caused by the low inelastic electron tunneling proportion and radiation efficiency. In this Letter, an electrically driven silicon light source with its efficiency enhanced by using a nano-antenna in a metal-insulator-semiconductor junction is proposed. Strong plasmon confinement in the nano-antenna provides large local density of optical states and bridges the wave vector mismatch between nanoscale volume field confinement and far-field radiation. Two orders of magnitude of emission enhancement are achieved over typical planar MIS junctions.
RESUMEN
Graphene, as a type of flexible and electrically adjustable two-dimensional material, has exceptional optical and electrical properties that make it possible to be used in modulators. However, the poor interaction between optical fields and a single atom graphene layer prevents the easy implementation of graphene modulators. Currently available devices often require a larger overlap area of graphene to obtain the desired phase or amplitude modulation, which results in a rather large footprint and high capacitance and consequently increases the energy consumption and reduces the modulation speed. In this paper, a localized plasmonic-enhanced waveguide modulator with high-speed tunability using graphene is proposed for telecommunication applications. Strong modulation of the transmission takes place due to the enhanced interaction between the ultrathin plasmon patches and the graphene, when the plasmons are tuned on- and off-resonance by the gate-tunable graphene. A 400 GHz modulation rate using low gated-voltages with an active device area of 0.2 µm2 and a low consumption of only 0.5 fJ/bit is achieved, which paves the way for ultrafast low-energy optical waveguide modulation and switching.
RESUMEN
In this paper, we propose a low-transmission-loss, high-speed, graphene-based electro-absorption modulator with a hybrid plasmonic waveguide at 1.55 µm. In the proposed device, double-layer graphene is placed on top of the horizontal hybrid plasmonic waveguide to enhance the light-graphene interaction. The adjustment of the in-plane permittivity of the anisotropy graphene causes a significant modulation of the absorption at the operating bandwidth of 0.4 THz, with modulation length of 8.5 µm and modulator footprint of 1.6 µm2. A taper silicon coupler is used for waveguide coupling, and 80% coupling efficiency is achieved. In addition, the modulation potential on a smaller footprint is further shown.