RESUMEN

This study aimed to investigate the predictive value of real-time shear wave elastography (SWE) for spontaneous preterm birth (SPB). This study prospectively selected 175 women with singleton pregnancies at 16 to 36 weeks of gestation. Cervical length (CL) and uterocervical angle (UCA) were measured using transvaginal ultrasonography. Real-time shear wave elastography was used to measure Young's modulus values, including the average Young's modulus (Emean) and the maximum Young's modulus (Emax) at 4 points: point A on the inner lip of the cervical os, point B on the outer lip of the cervical os, point C on the inner lip of the external os, and point D on the outer lip of the external os. Receiver operating characteristic (ROC) curve analysis was performed to compare the accuracy of Young's modulus values at the 4 points, CL, and UCA in predicting SPB. Significant variables were used to construct a binary logistic regression model to predict the multifactorial predictive value of SPB, which was evaluated using an ROC curve. A total 176 valid cases, including 160 full-term pregnancies and 16 SPB, were included in this study. Receiver operating characteristic curve analysis revealed that Emean at point A, as well as Emean and Emax at point D, had a relatively high accuracy in diagnosing SPB, with area under the curve values of 0.704, 0.708, and 0.706, respectively followed by CL (0.670), SWE at point C (Emean 0.615, Emax 0.565), SWE at point B (Emean 0.577, Emax 0.584), and UCA (0.476). Binary logistic regression analysis showed that comorbidities during pregnancy (including diabetes mellitus, hypertension, cholestasis and thyroid dysfunction), CL, and Emean at point A were independent predictors of preterm birth. In addition, the AUC value of the logistic regression model's ROC curve was 0.892 (95% CI: 0.804-0.981), with a sensitivity of 0.867, specificity of 0.792, and Youden's index of 0.659, indicating that the regression model has good predictive ability for SPB. Real-time shear wave elastography showed a higher predictive value for SPB than CL and UCA. The SWE combined with CL and comorbidities during pregnancy model has a good predictive ability for SPB.

Asunto(s)

Diagnóstico por Imagen de Elasticidad , Nacimiento Prematuro , Curva ROC , Humanos , Diagnóstico por Imagen de Elasticidad/métodos , Femenino , Embarazo , Nacimiento Prematuro/diagnóstico por imagen , Adulto , Estudios Prospectivos , Valor Predictivo de las Pruebas , Módulo de Elasticidad , Cuello del Útero/diagnóstico por imagen , Ultrasonografía Prenatal/métodos , Medición de Longitud Cervical/métodos

RESUMEN

Quasi-two-dimensional (quasi-2D) perovskites exhibit excellent performance when applied to light-emitting diodes (LEDs). However, quasi-2D perovskite films generally have nonuniform n phases and irregular internal crystal structures, which degrade the device's performance. Here, we propose using a Dion-Jacobson (DJ)-type organic spacer to modulate the phase distribution of the Ruddlesden-Popper (RP) quasi-2D perovskite. A DJ-type organic spacer cation, 1.6-hexamethylenediamine (HDABr2), was introduced into the perovskite as the second spacer cation with propylamine hydrobromide (PABr). As DJ-type and RP-type perovskites have similar spacings, RP-DJ style does not cause a chaotic crystalline structure; instead, it modulates the perovskite crystallization and narrows the phase distribution. In parallel, there is a substantial improvement in the maximum luminance, current efficiency, external quantum efficiency, and device stability of the quasi-2D perovskite LEDs. This work provides a novel concept for combining the organic spacer cations for quasi-2D perovskites.

RESUMEN

For the semiconductors of atomic length scales, even one atom layer difference could modify crystal symmetry and lead to a significant change in electronic structure, which is essential for modern electronics. However, the experimental exploration of such effect has not been achieved due to challenges in sample fabrication and characterization with atomic-scale precision. Here, we report the discovery of crystal symmetry alternation induced band-gap oscillation in atomically thin PbTe films by scanning tunneling microscopy. As the thickness of PbTe films is reduced from an 18- to 2-atomic layer, the band-gap size not only expands from 0.19 eV to 1.06 eV by 5.6 fold, but also exhibits an even-odd-layer oscillation, which is attributed to the alternating crystal symmetries between P4/mmm and P4/nmm. Our work sheds new light on electronic structure engineering of semiconductors at atomic scale for next-generation nanoelectronics.

RESUMEN

We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer V2Se2O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.

RESUMEN

The WSe2 monolayer in 1T' phase is reported to be a large-gap quantum spin Hall insulator, but is thermodynamically metastable and so far the fabricated samples have always been in the mixed phase of 1T' and 2H, which has become a bottleneck for further exploration and potential applications of the nontrivial topological properties. Based on first-principle calculations in this work, it is found that the 1T' phase could be more stable than 2H phase with enhanced interface interactions. Inspired by this discovery, SrTiO3 (100) is chosen as substrate and WSe2 monolayer is successfully grown in a 100% single 1T' phase using the molecular beam epitaxial method. Combining in situ scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements, it is found that the in-plane compressive strain in the interface drives the 1T'-WSe2 into a semimetallic phase. Besides providing a new material platform for topological states, the results show that the interface interaction is a new approach to control both the structure phase stability and the topological band structures of transition metal dichalcogenides.

RESUMEN

A quantum spin hall insulator is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T^{'}-WTe_{2} exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along the a axis or a tensile strain along the b axis can drive 1T^{'}-WTe_{2} into an full gap insulating phase. A combined study of molecular beam epitaxy and in situ scanning tunneling microscopy or spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.

RESUMEN

Lateral heterostructures built from an armchair MoS2 nanoribbon (AMoS2NR) and an armchair NbS2 nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation with increasing nanoribbon width, which is different from the work functions of other kinds of nanoribbons. The AMoS2NR-ANbS2NR lateral heterostructure exhibits an anomalous transport gap that is much larger than the bandgap of the AMoS2NR. As a result, a field effect transistor with AMoS2NR as the channel and ANbS2NRs as electrodes has high on-off ratios of 106-107 and a tiny leakage current of the order of 10-8 µA. These results suggest that lateral metal-semiconductor heterostructures of transition metal dichalcogenides may have potential applications in nanodevices with low energy consumption.