RESUMEN

In situ metal-organic chemical vapor deposition growth of SiNx passivation layers is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface damage. A higher SiNx growth rate, when produced by higher SiH4 reactant gas flow, enables faster lateral coverage and coalescence of the initial SiNx islands, thereby suppressing SiH4-induced III-nitride etching. The effect of in situ SiNx passivation on the structural properties of AlGaN/GaN HEMTs has been evaluated using high-resolution X-ray diffraction. Electrical properties of the passivated HEMTs were evaluated by clover-leaf van der Pauw Hall measurements. The key findings include (a) a correlation of constituent gas chemistry with SiNx stoichiometry, (b) the degree of suppression of strain relaxation in the barrier layer that can be optimized through the SiNx stoichiometry, and (c) optimum strain relaxation by tailoring the SiNx passivation layer stoichiometry that can result in near-ideal AlGaN/AlN/GaN interfaces. The latter is expected to reduce the carrier scatterings and improve electron mobility. Under optimized conditions, low sheet resistance and high electron mobility are obtained. At 10 K, a sheet resistance of 33 Ω/sq and a mobility of 16,500 cm2/V-s are achieved. At 300 K, the sheet resistance is 336 Ω/sq and mobility is 2020 cm2/V-s with a sheet charge density of 0.78 × 1013 cm-2.

RESUMEN

Growth of single-crystalline GaN on polycrystalline diamond is reported for the first time. The structure was achieved using a combined process including selective diamond growth on GaN/Si wafers using hot filament chemical vapor deposition (CVD) and epitaxial lateral overgrowth of GaN on the window region between then above the diamond stripes via metal organic CVD. Optimization of the growth was performed by varying the ammonia to trimethylgallium mole ratio (V/III), chamber pressure, and temperature in the range of 8000-1330, 40-200 Torr, and 975-1030 °C, respectively. A lower pressure, higher V/III ratio, higher temperature, and GaN window mask openings along [11̅00] resulted in enhanced lateral growth of GaN. Complete lateral coverage and coalescence of GaN were achieved over a [11̅00]-oriented 5 µm-wide GaN window between 5 µm diamond stripes when using V/III = 7880, P = 100 Torr, and T = 1030 °C. The crystalline quality of overgrown GaN was confirmed using cross-sectional scanning electron microscopy, high-resolution X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy, and selective-area electron diffraction.

RESUMEN

We report metamaterial terahertz (THz) bandpass filters with tunable dual-band selectivity. The shift in the center frequency of the device is achieved by actively modifying the effective length of the resonators. This was realized by introducing vanadium dioxide (VO2) bridges interconnecting specific regions of each resonator. Raising the temperature across the phase transition shifted the resonance frequency by ~32% due to changes in the electrical conductivity of the VO2. Measured THz transmission response of the proposed dual-band filter was in good correspondence with simulations.

RESUMEN

Bandpass filters are reported based on double-stacked metamaterial layers separated by an air gap for operation at terahertz frequencies. Several stacking configurations were investigated designed for a ~0.5 THz center frequency. The filters exhibited improved spectral transmission properties when compared with conventional ones based on single metamaterial layers. 3 dB bandwidth of ~78 GHz and sidelobe suppression ratio >16 dB were determined when symmetric or asymmetric double layers were stacked. We demonstrate that superior frequency selectivity can be achieved when metamaterial layers with different unit cells are used. Good agreement was found between measured and simulated transmission response.

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RESUMEN

This paper investigates the roles of semiconducting single-walled carbon nanotubes (SWNTs) and metallic SWNTs in the SWNT/poly(3-hexylthiophene) (P3HT)-based photovoltaic conversion system. SWNTs containing different fractions of semiconducting nanotubes were conjugated with P3HT by virtue of π-π interaction. The energy transfer and carrier transport mechanisms in the photovoltaic composites were experimentally investigated by optical absorption spectroscopy, photoluminescence spectroscopy and carrier mobility measurements. At low loading of SWNTs, a high percentage of semiconducting nanotubes result in diminished non-radiative decay of exciton and lower carrier mobility, causing higher open circuit voltage and lower photocurrent. At an optimized morphology, SWNT/P3HT/phenyl-C61-butyric acid methyl ester (PCBM) hybrid-based solar cells demonstrated much higher photocurrent than a reference solar cell (P3HT:PCBM) due to the improved carrier mobility. Further thermal annealing of the devices significantly increased the open circuit voltage to 610 mV, resulting in an 80% increase of power conversion efficiency in comparison to the reference solar cell. These results are expected to lay a foundation for the integration of various nanocrystals into solar cells for efficient photovoltaic conversion.

RESUMEN

Plastic shear significantly reduces the phase transformation (PT) pressure when compared to hydrostatic conditions. Here, a paradoxical result was obtained: PT of graphitelike hexagonal boron nitride (hBN) to superhard wurtzitic boron nitride under pressure and shear started at about the same pressure ( approximately 10 GPa) as under hydrostatic conditions. In situ x-ray diffraction measurement and modeling of the turbostratic stacking fault concentration (degree of disorder) and PT in hBN were performed. Under hydrostatic pressure, changes in the disorder were negligible. Under a complex compression and shear loading program, a strain-induced disorder was observed and quantitatively characterized. It is found that the strain-induced disorder suppresses PT which compensates the promotion effect of plastic shear. The existence of transformation-induced plasticity (TRIP) was also proved during strain-induced PT. The degree of disorder is proposed to be used as a physical measure of plastic straining. This allows us to quantitatively separate the conventional plasticity and transformation-induced plasticity. Surprisingly, it is found that TRIP exceeds the conventional plasticity by a factor of 20. The cascade structural changes were revealed, defined as the reoccurrence of interacting processes including PTs, disordering, conventional plasticity, and TRIP. In comparison with hydrostatic loading, for the same degree of disorder, plastic shear indeed reduces the PT pressure (by a factor of 3-4) while causing a complete irreversible PT. The analytical results based on coupled strain-controlled kinetic equations for disorder and PT confirm our conclusions.