RESUMEN
Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 µg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 µg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.
RESUMEN
Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current-voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.
RESUMEN
Transparent polymer layers that heal minor scratches and maintain the optical properties of the devices for a long time are highly desirable in optoelectronics. This paper presents the results of the electrical characterization of thin PEDOT:PSS films on the novel, optically transparent thiol-ene substrates capable of healing scratches under room-temperature conditions. Electrical properties of the PEDOT:PSS films deposited on the conventional alumina ceramic substrates were also tested for comparative purposes. This study demonstrated that the substrate can have a significant effect on the electrical properties of PEDOT:PSS films, and the electrical resistance of the films on thiol-ene substrates is not as stable as on alumina ceramics. However, the changes in electrical resistance of the films on thiol-ene are small enough over a sufficiently wide range of operating temperatures and relative humidities and allow the application of such bilayers in various polymeric optoelectronic devices.
RESUMEN
In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.
RESUMEN
A photopolymerizable thiol-ene composition was prepared as a mixture of pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) and 1,3,5-triallyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione (TTT), with 1 wt. % of 2,2-dimethoxy-2-phenylacetophenone (DMPA) photoinitiator. A systematic analytical analysis that investigated the crosslinked PETMP-TTT polymer coatings employed Fourier transform infrared spectroscopy, ultravioletâ»visible spectroscopy, differential scanning calorimetry, thermogravimetric analysis, pencil hardness, thermo-mechanical cyclic tensile, scratch testing, and atomic force microscopy. These coatings exhibited high optical transparency and shape-memory that assisted scratch-healing properties. Scratches produced on the PETMP-TTT polymer coatings with different constant loadings (1.2 N, 1.5 N, and 2.7 N) were completely healed after the external stimulus was applied. The strain recovery ratio and total strain recovery ratio for PETMP-TTT polymer were found to be better than 94 ± 1% and 97 ± 1%, respectively. The crosslinked PETMP-TTT polymer network was also capable of initiating scratch recovery at ambient temperature conditions.
RESUMEN
Piezoresistive properties of hydrogenated diamond-like carbon (DLC) and DLC-based nickel nanocomposite (DLC:Ni) films were studied in the range of low concentration of nickel nanoparticles. The films were deposited by reactive high power pulsed magnetron sputtering (HIPIMS) of Ni target, and some samples were deposited by direct current (dc) reactive magnetron sputtering for comparison purposes. Raman scattering spectroscopy, energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to study the structure and chemical composition of the films. A four-point bending test was applied to study piezoresistive properties of the films. For some samples containing less than 4 at. % Ni and for the samples containing no Ni (as defined by both EDS and XPS), a giant negative piezoresistive effect was observed. The giant negative piezoresistive effect in DLC films deposited by either reactive HIPIMS or dc magnetron sputtering of Ni target was explained by possible clustering of the sp2-bonded carbon and/or formation of areas with the decreased hydrogen content. It was suggested that the tensile stress-induced rearrangements of these conglomerations have resulted in the increased conductivity paths.
RESUMEN
Ultrafast relaxation dynamics of diamond-like carbon (DLC) films with embedded Ag nanoparticles (DLC:Ag) and photovoltaic properties of heterojunctions consisting of DLC:Ag and crystalline silicon (DLC:Ag/Si) were investigated by means of transient absorption (TAS) spectroscopy and photovoltaic measurements. The heterojunctions using both p type and n type silicon were studied. It was found that TAS spectra of DLC:Ag films were dependent on the used excitation wavelength. At wavelengths where Ag nanoparticles absorbed light most intensively, only DLC signal was registered. This result is in good accordance with an increase of the DLC:Ag/Si heterojunction short circuit current and open circuit voltage with the excitation wavelength in the photovoltaic measurements. The dependence of the TAS spectra of DLC:Ag films and photovoltaic properties of DLC:Ag/Si heterostructures on the excitation wavelength was explained as a result of trapping of the photoexcited hot charge carriers in DLC matrix. The negative photovoltaic effect was observed for DLC:Ag/p-Si heterostructures and positive ("conventional") for DLC:Ag/n-Si ones. It was explained by the excitation of hot plasmonic holes in the Ag nanoparticles embedded into DLC matrix. Some decrease of DLC:Ag/Si heterostructures photovoltage as well as photocurrent with DLC:Ag film thickness was observed, indicating role of the interface in the charge transfer process of photocarriers excited in Ag nanoparticles.
RESUMEN
In the present study, diamond-like carbon films with embedded Ag nanoparticles (DLC:Ag) were deposited by reactive magnetron sputtering. Structure of the films was investigated by Raman scattering spectroscopy. Atomic force microscopy was used to define thickness of DLC:Ag films as well as to study the surface morphology and size distribution of Ag nanoparticles. Optical absorbance and reflectance spectra of the films were studied in the 180-1100-nm range. Air annealing effects on structure and optical properties of the DLC:Ag were investigated. Annealing temperatures were varied in the 180-400 °C range. Changes of size and shape of the Ag nanoclusters took place due to agglomeration. It was found that air annealing of DLC:Ag films can result in graphitization following destruction of the DLC matrix. Additional activation of surface-enhanced Raman scattering (SERS) effect in DLC:Ag films can be achieved by properly selecting annealing conditions. Annealing resulted in blueshift as well as significant narrowing of the plasmonic absorbance and reflectance peaks. Moreover, quadrupole surface plasmon resonance peaks appeared. Modeling of absorption spectra of the nanoclusters depending on the shape and surrounding media has been carried out.