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We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.

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The level of funding available for research and development (R&D) of diagnostics (D) and therapeutics (T) for incurable diseases varies and is not associated with the extent of their disease burden. Crowdfunding is a promising way to increase funding for R&D of D&T for underfunded incurable diseases, such as Alzheimer's and Parkinson's disease, which has not been exploited to its full capacity. Investing into efforts to educate patients and researchers about its prospective is a worthwhile endeavor, which could lead to the generation of substantial new capital to finance the development of novel therapeutics for these diseases.

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MoS2 has received a lot of attention lately as a semiconducting channel material for electronic devices, in part due to its large band gap as compared to that of other 2D materials. Yet, the performance and reliability of these devices are still severely limited by defects which act as traps for charge carriers, causing severely reduced mobilities, hysteresis, and long-term drift. Despite their importance, these defects are only poorly understood. One fundamental problem in defect characterization is that due to the large defect concentration only the average response to bias changes can be measured. On the basis of such averaged data, a detailed analysis of their properties and identification of particular defect types are difficult. To overcome this limitation, we here characterize single defects on MoS2 devices by performing measurements on ultrascaled transistors (∼65 × 50 nm) which contain only a few defects. These single defects are characterized electrically at varying gate biases and temperatures. The measured currents contain random telegraph noise, which is due to the transfer of charge between the channel of the transistors and individual defects, visible only due to the large impact of a single elementary charge on the local electrostatics in these small devices. Using hidden Markov models for statistical analysis, we extract the charge capture and emission times of a number of defects. By comparing the bias-dependence of the measured capture and emission times to the prediction of theoretical models, we provide simple rules to distinguish oxide traps from adsorbates on these back-gated devices. In addition, we give simple expressions to estimate the vertical and energetic positions of the defects. Using the methods presented in this work, it is possible to locate the sources of performance and reliability limitations in 2D devices and to probe defect distributions in oxide materials with 2D channel materials.

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Nanocarriers offer several advantages in drug delivery including increased retention time in the body, the ability to solubilize hydrophobic cargo, and the ability to target specific tissues. These attributes have led to a large volume of research being dedicated to the development of novel nanocarriers and their use in treating disease. Many advances have been made in the synthesis and formulation of nanocarriers. For instance, flash precipitation and the use of rotary evaporator provide new methods for nanocarrier synthesis. Biomolecules like heparin and sarcosine have been successfully utilized for the synthesis of unique copolymers for use in nanocarrier systems. Also, the efficacy of nanocarrier targeting has been increased by taking advantage of unique microenvironments present in specific pathologies, utilization of phage properties, and scaffold systems for multiple targeting moieties. Finally, nanocarriers have been shown to provide immunomodulatory effects. This article provides a focused review of several recent patents covering the synthesis, composition and the use of novel nanocarriers.

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