RESUMEN
SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.
Asunto(s)
Fotometría/instrumentación , Silicio/química , Transductores , Transistores Electrónicos , Diseño Asistido por Computadora , Diseño de Equipo , Análisis de Falla de Equipo , Rayos Infrarrojos , Microondas , Reproducibilidad de los Resultados , Sensibilidad y Especificidad , Silicio/efectos de la radiaciónRESUMEN
A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.
Asunto(s)
Interferometría/instrumentación , Óptica y Fotónica/instrumentación , Semiconductores , Procesamiento de Señales Asistido por Computador/instrumentación , Silicio/química , Telecomunicaciones/instrumentación , Diseño de Equipo , Análisis de Falla de EquipoRESUMEN
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475 degrees C. 0.25-mm-long diodes annealed to 300 degrees C have a response to 1539 nm radiation of 0.1 A W-(-1) at a reverse bias of 5 V and 1.2 A W(-1) at 20 V. 3-mm-long diodes processed to 475 degrees C exhibited two states, L1 and L2, with photo responses of 0.3 +/-0.1 A W(-1) at 5 V and 0.7 +/-0.2 A W(-1) at 20 V for the L1 state and 0.5 +/-0.2 A W(-1) at 5 V and 4 to 20 A W(-1)-1 at 20 V for the L2 state. The diodes can be switched between L1 and L2. The bandwidths vary from 10 to 20 GHz. These diodes will generate electrical power from the incident radiation with efficiencies from 4 to 10 %.
RESUMEN
We report on the observation of quantum-limited timing jitter in a harmonically mode-locked soliton fiber laser with an ultralow-noise local oscillator. The effects of amplitude and phase modulation on the spectrum are described and compared with theory.
RESUMEN
We have studied a passive, harmonically mode-locked stretched-pulse erbium fiber ring laser with net positive dispersion that is self-stabilized by gain depletion and electrostriction. Periodic pulses with supermode suppression of >75 dB and picosecond jitter are achieved. The pulses are compressible to 125 fs by external chirp compensation. The repetition rate is 220 MHz, and the average power is as high as 80 mW.
RESUMEN
Two-photon absorption provided by a semiconductor mirror structure is shown to reduce amplitude fluctuations significantly in a harmonically mo e-locked fiber ring laser. Pulse dropouts are eliminated in a laser that produces picosecond pulses at a repetition rate of 2 GHz.
RESUMEN
Using electronic phase detection, we study the dynamics that govern pulse retiming in an actively mode-locked fiber laser. We compare the dynamics for amplitude and for phase modulation and identify the characteristic time constants for each case. The retiming dynamics for amplitude modulation are revealed as a first-order exponential decay, whereas for phase modulation the dynamics are those of a damped harmonic oscillator. We show that the measured time constants agree with predictions given by the soliton perturbation theory.