RESUMEN
The spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical setup. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize van der Waals magnetic materials, which support long-range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the van der Waals antiferromagnet MnPSe3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealing the formation of a few nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe3 magnetic lattice. Our results show that the damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements.
RESUMEN
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure, we obtain the temperature dependence of the spin conductances (Gs, Gr, and Gi), disentangling the contribution of field-like torque (Gi), damping-like torque (Gr), and spin-flip scattering (Gs). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from Gi, which is at least three times larger than Gr below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which plays a key role in emerging fields such as superconducting spintronics and caloritronics as well as topological quantum computation.
RESUMEN
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers.