RESUMEN
InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or zincblende (ZB) crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6 K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP ZB and WZ segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multi-shell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.
RESUMEN
We develop a novel approach to treat excitation energy transfer in hybrid nanosystems composed by an organic molecule attached to a semiconductor nanoparticle. Our approach extends the customary Förster theory by considering interaction between transition multipole moments of the nanoparticle at all orders and a point-like transition dipole moment representing the molecule. Optical excitations of the nanoparticle are described through an envelope-function configuration interaction method for a single electron-hole pair. We applied the method to the prototypical case of a core/shell CdSe/ZnS semiconductor quantum dot which shows a complete suppression of the energy transfer for specific transitions which could not be captured by Förster theory.
RESUMEN
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core-multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure.
RESUMEN
We show theoretically that nearly indistinguishable photons can be generated with non-identical semiconductor-based sources. The use of virtual Raman transitions and the optimization of the external driving fields increases the tolerance to spectral inhomogeneity to the meV energy range. A trade-off emerges between photon indistinguishability and efficiency in the photon-generation process. Linear (quadratic) dependence of the coincidence probability within the Hong-Ou-Mandel setup is found with respect to the dephasing (relaxation) rate in the semiconductor sources.
RESUMEN
A novel simulation strategy is proposed for searching for semiconductor quantum devices that are optimized with respect to required performances. Based on evolutionary programming, a technique that implements the paradigm of genetic algorithms in more-complex data structures than strings of bits, the proposed algorithm is able to deal with quantum devices with preset nontrivial constraints (e.g., transition energies, geometric requirements). Therefore our approach allows for automatic design, thus avoiding costly by-hand optimizations. We demonstrate the advantages of the proposed algorithm through a relevant and nontrivial application, the optimization of a second-harmonic-generation device working in resonance conditions.
RESUMEN
Pancreatic carcinoid tumors are very rare. A case of obstructive jaundice caused by a large mass of the head of the pancreas is described. The histological examination of the surgical specimen revealed a pancreatic carcinoid tumor. A brief, discussion of the main characteristics of this kind of tumor is performed by the Authors.