RESUMEN
Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated Bi2O2Se field effect transistors showed decent field effect mobility of 100 cm2V-1s-1. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 106A W-1and a specific detectivity of 2.55 × 1013Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that Bi2O2Se is an excellent candidate for future high-performance optoelectronic device applications.
RESUMEN
The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.
RESUMEN
Chemical vapour deposition (CVD) is one of the most promising methods to synthesize monolayers of 2D materials like transition metal dichalcogenides (TMDs) over a large area with high film quality. Among many parameters that determine the growth of 2D materials, flow of precursor near the surface is one of the most sensitive conditions. In this study, we show how subtle changes in the flow near the substrate surface can affect the quality and coverage of the MoS2 monolayer. We fine tune the flow of the carrier gas near the substrate under two extreme conditions to grow large area and clean monolayer. In the first study, we grew several centimetres long continuous monolayer under the condition, which generally produces monolayers of few tens of micrometres in size without tuning the flow on the substrate surface. In the second case, we got monolayer MoS2 under the conditions meant for the formation of bulk MoS2.We achieved this by placing blockades on the substrate surface which helped in modifying the flow near them. Through simulation, we showed how the flow is affected near these blockades and used it as a guiding rule to grow patterned continuous MoS2 monolayers. Detailed electrical and optical measurements were done to determine the quality of the as-grown samples. Our studies provide a way to obtain clean, large area monolayer of desired pattern by tuning the flow of precursor on the vicinity of the substrate surface even when the growth conditions in CVD are far from optimum.